Fairchild FCA76N60N service manual

FCA76N60N N-Channel MOSFET

FCA76N60N

N-Channel MOSFET

600V, 76A, 36mΩ

Features

•R

• Ultra Low Gate Charge ( Typ. Qg = 218nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

= 28mΩ ( Typ.)@ VGS = 10V, ID = 38A

DS(on)

D

Description

The SupreMOS MOSFET, Fairchild’s next generation of high

voltage super-junction MOSFETs, employs a deep trench filling

process that differentiates it from preceding multi-epi based

technologies. By utilizing this advanced technology and precise

process control, SupreMOS provides world class Rsp, superior

switching performance and ruggedness.

This SupreMOS MOSFET fits the industry’s AC-DC SMPS

requirements for PFC, server/telecom power, FPD TV power,

ATX power, and industrial power applications.

May 2010

SupreMOS

D

TM

G

TO-3PN

GSD

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

Drain Current

Drain Current -Pulsed (Note 1) 228 A

Single Pulsed Avalanche Energy (Note 2) 8022 mJ

Avalanche Current 25.3 A

Repetitive Avalanche Energy 5.43 mJ

MOSFET dv/dt Ruggedness (Note 3) 100

Peak Diode Recovery dv/dt 20

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 543 W

C

-Derate above 25

= 25oC) 76

C

= 100oC) 48.1

C

o

C4.34W/

S

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

θJS

R

θJA

Thermal Resistance, Junction to Case 0.23

Thermal Resistance, Case to Heat Sink (Typical) 0.24

Thermal Resistance, Junction to Ambient 40

A

V/ns

o

o

o

C/WR

o

C

C

C

©2010 Fairchild Semiconductor Corporation
FCA76N60N Rev. A

www.fairchildsemi.com1

FCA76N60N N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FCA76N60N FCA76N60N TO-3PN - - 30

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V - 914 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1.0 - Ω

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V,TJ = 25oC600--V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC - 0.73 - V/oC

D

V

= 480V, V

DS

= 480V, TJ = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V

Static Drain to Source On Resistance VGS = 10V, ID = 38A - 28 36 mΩ

Forward Transconductance VDS = 40V, ID = 38A - 88 - S

Input Capacitance

Output Capacitance - 370 495 pF

Reverse Transfer Capacitance - 3.1 5.0 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

- 9310 12385 pF

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 196 - pF

Total Gate Charge at 10V

V

= 380V, ID = 38A,

Gate to Source Gate Charge - 39 - nC

Gate to Drain “Miller” Charge - 66 - nC

DS

V

= 10V

GS

(Note 4)

- 218 285 nC

μA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 24 58 ns

Turn-Off Delay Time - 235 480 ns

Turn-Off Fall Time - 32 74 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 25.3A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 76A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 76 A

Maximum Pulsed Drain to Source Diode Forward Current - - 228 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 16 - μC

= 380V, ID = 38A

V

DD

R

= 4.7Ω

G

(Note 4)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 38A - - 1.2 V

SD

= 38A

SD

-3478ns

- 613 - ns

FCA76N60N Rev. A

www.fairchildsemi.com2

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1000

100

V

= 15.0 V

GS

10.0 V

6.0 V

5.5 V

5.0 V

4.5 V

1000

100

FCA76N60N N-Channel MOSFET

150oC

-55oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

μs Pulse Test

VGS, Gate-Source Voltage[V]

10

, Drain Current[A]

D

I

*Notes:

1. 250

μs Pulse Test

2. T

= 25oC

1

0.1 1 10 20

C

VDS, Drain-Source Voltage[V]

10

, Drain Current[A]

D

I

1

2468

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

50

45

40

[mΩ],

35

DS(ON)

R

VGS = 10V

VGS = 20V

30

Drain-Source On-Resistance

25

0 50 100 150 200 250 300

*Notes: T

ID, Drain Current [A]

C

= 25

o

C

1000

100

150oC

25oC

10

, Reverse Drain Current [A]

S

I

1

0.2 0.4 0.6 0.8 1.0 1.2 1.4

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

100000

10000

1000

100

Capacitances [pF]

FCA76N60N Rev. A

C

iss

C

oss

*Notes:

= 0V

1. V

GS

2. f = 1MHz

10

C

= Cgs + Cgd (Cds = shorted

iss

C

= Cds + C

oss

C

rss

1

0.1 1 10 100 600

= C

gd

gd

)

C

rss

VDS, Drain-Source Voltage [V]

10

VDS = 120V

8

VDS = 300V

6

VDS = 480V

4

, Gate-Source Voltage [V]

GS

V

2

*Notes: I

= 38A

0

0 40 80 120 160 200 240

D

Qg, Total Gate Charge [nC]

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