Fairchild FCA36N60NF service manual

tm

FCA36N60NF

D

G

S

GSD

TO-3PN

N-Channel MOSFET, FRFET

600V, 36A, 95mΩ

February 2011

SupreMOS

FCA36N60NF N-Channel MOSFET, FRFET

TM

Features

•R

• Ultra Low Gate Charge ( Typ. Qg = 86nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt

P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 80mΩ ( Typ.)@ VGS = 10V, ID = 18A

DS(on)

o

= 25

C unless otherwise noted*

C

Symbol Parameter FCA36N60NF Units

Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V

Continuous (T
Continuous (T

(T

= 25oC) 312 W

C

Derate above 25

STG

Drain Current
Drain Current Pulsed (Note 1) 104.7 A

Single Pulsed Avalanche Energy (Note 2) 1800 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 3.12 mJ
Peak Diode Recovery dv/dt (Note 3) 50
MOSFET dv/dt Ruggedness 100

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech­nologies. By utilizing this advanced technology and precise pro­cess control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.

= 25oC) 34.9

C

= 100oC) 22

C

o

C2.6W/

300

Thermal Characteristics

Symbol Parameter FCA36N60NF Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.40
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40

A

V/ns

o

o

o

C/WR

o

C

C
C

©2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. A

www.fairchildsemi.com1

FCA36N60NF N-Channel MOSFET, FRFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FCA36N60NF FCA36N60NF TO-3PN - - 30

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss

eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 338 - pF

C

oss

Q

g(tot)

Q

gs

Q

gd

ESR Equivalent Series Resistance (G-S) Drain Open, f=1MHz - 1.2 - Ω

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V,TJ = 25oC600--V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 1mA, Referenced to 25oC - 0.60 - V/oC

D

V

= 480V, V

DS

= 0V - - 10

GS

DS

= 125oC - - 100

T

J

= 0V - - ±100 nA

Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 3.7 5.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 18A - 80 95 mΩ
Forward Transconductance VDS = 20V, ID = 18A - 39 - S

Input Capacitance
Output Capacitance - 145 195 pF
Reverse Transfer Capacitance - 5 8 pF

= 100V, VGS = 0V

V

DS

f = 1MHz

- 3191 4245 pF

Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 81 - pF

Total Gate Charge at 10V
Gate to Source Gate Charge - 16 - nC
Gate to Drain “Miller” Charge - 36 - nC

V

= 380V, ID = 18A,

DS

V

= 10V

GS

(Note 4)

-86112nC

μA

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 17 44 ns
Turn-Off Delay Time - 92 194 ns
Turn-Off Fall Time - 4 18 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 12A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 36A, di/dt ≤ 1200A/μs, VDD ≤ 380V, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 36 A
Maximum Pulsed Drain to Source Diode Forward Current - - 108 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.3 - μC

= 380V, ID = 18A

V

DD

R

= 4.7Ω

G

(Note 4)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs

F

= 18A - - 1.2 V

SD

= 18A

SD

-2764ns

- 166 - ns

FCA36N60NF Rev. A

www.fairchildsemi.com2

Typical Performance Characteristics

0.1 1 10 20

1

10

100

200

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-Source Voltage[V]

246810

0.2

1

10

100

200

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V ]

0 1836547290108

50

75

100

125

150

*Notes: T

C

= 25

o

C

VGS = 20V

VGS = 10V

R

DS(ON)

[mΩ],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.2

1

10

100

200

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 100 600

1

10

100

1000

10000

100000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Notes:

1. V

GS

= 0V

2. f = 1MHz
C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 20406080100

0

2

4

6

8

10

VDS = 480V

VDS = 300V

*Notes: I

D

= 18A

VDS = 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Ga te Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FCA36N60NF N-Channel MOSFET, FRFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FCA36N60NF Rev. A

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