Fairchild FCA20N60F service manual
FCA20N60F 600V N-CHANNEL FRFET
FCA20N60F
600V N-CHANNEL FRFET Features
•650V @TJ = 150°C
• Typ. Rds(on)=0.15Ω
• Fast Recovery Type ( t
• Ultra low gate charge (typ. Qg=75nC)
• Low effective output capacitance (typ. Coss.eff=165pF)
• 100% avalanche tested
• RoHS Compliant
= 160ns )
rr
December 2008
SuperFET
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has be
conduction loss, provide superior switching perfor
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
G
en tailored to minimize
mance, and
D
TM
TO-3PN
GSD
FCA Series
S
Absolute Maximum Ratings
Symbol Parameter FCA20N60F Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
J, TSTG
T
L
Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25°C)
- Continuous (T
Drain Current - Pulsed
Gate-Source voltage ± 30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 20 A
Repetitive Avalanche Energy (Note 1) 20.8 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 100°C)
C
(Note 1)
(Note 2)
(Note 3) 50 V/ns
20
12.5
60
690 mJ
208
1.67
300 °C
Thermal Characteristics
Symbol Parameter FCA20N60F Unit
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case 0.6 °C/W
Thermal Resistance, Junction-to-Ambient 40 °C/W
A
A
A
W
W/°C
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FCA20N60F Rev. A1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCA20N60F FCA20N60F TO-3PN -- -- 30
FCA20N60F 600V N-CHANNEL FRFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min Typ Max Units
Off Characteristics
BV
DSS
ΔBV
/ ΔT
BV
DSS
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
oss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V
= 0V, ID = 250μA, TJ = 150°C -- 650 -- V
V
GS
Breakdown Voltage Temperature
DSS
Coefficient
J
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V
I
= 250μA, Referenced to 25°C -- 0.6 -- V/°C
D
VGS = 0V, ID = 20A
V
= 480V, TC = 125°C
DS
-- 700 -- V
--
--
--
--
10
100μAμA
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 10A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 1280 1665 pF
= 10V, ID = 10A -- 0.15 0.19 Ω
V
GS
(Note 4)
-- 17 -- S
-- 2370 3080 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 95 -- pF
Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF
eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF
Turn-On Delay Time VDD = 300V, ID = 20A
= 25Ω
R
Turn-On Rise Time -- 140 290 ns
G
-- 62 135 ns
Turn-Off Delay Time -- 230 470 ns
Turn-Off Fall Time -- 65 140 ns
Total Gate Charge VDS = 480V, ID = 20A
= 10V
V
Gate-Source Charge -- 13.5 18 nC
GS
Gate-Drain Charge -- 36 -- nC
(Note 4, 5)
-- 75 98 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 20A
/dt =100A/μs (Note 4)
dI
Reverse Recovery Charge -- 1.1 -- μC
F
-- 160 -- ns
NOTES:
1. Repetitive Rating: Pulse width limited
= 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
2. I
AS
3. ISD ≤ 20A, di/dt ≤ 1200A/μs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300μs, D
5. Essentially Independent of Operating Temperature Typical Characteristics
by maximum junction temperature
, Starting TJ = 25°C
DSS
uty Cycle ≤ 2%
FCA20N60F Rev. A1
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
2
10
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
Bottom : 5.5 V
10
0
, Drain Current [A]
10
D
I
-1
10
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
0.4
2
10
1
10
150oC
25oC
, Drain Current [A]
D
0
* Notes :
μs Pulse Test
1. 250
= 25oC
2. T
C
0
10
1
10
I
10
246810
-55oC
VGS , Gate-Source Voltage [V]
and Temperatue
2
10
* Note:
1. V
2. 250
= 40V
DS
μs Pulse Test
FCA20N60F 600V N-CHANNEL FRFET
0.3
[Ω],
0.2
DS(ON)
R
0.1
Drain-Source On-Resistance
0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ID, Drain Current [A]
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
1
10
, Reverse Drain Current [A]
I
0
10
DR
150oC
25oC
* Notes :
1. V
2. 250
= 0V
GS
μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Capacitance [pF]
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
= 0 V
* Notes :
1. V
GS
10
2. f = 1 MHz
1
C
iss
C
rss
0
-1
10
0
10
VDS, Drain-Source Voltage [V]
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 1020304050607080
QG, Total Ga te Charge [nC]
VDS = 100V
VDS = 250V
VDS = 400V
* Note : ID = 20A
FCA20N60F Rev. A1
3 www.fairchildsemi.com
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