Fairchild FCA16N60N service manual
FCA16N60N N-Channel MOSFET
D
G
S
G SD
TO-3PN
FCA Series
FCA16N60N
N-Channel MOSFET
600V, 16A, 0.170Ω
Features
• R
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
= 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A
DS(on)
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
August 2009
TM
SupreMOS
MOSFET Maximum Ratings
Symbol Parameter FCA16N60N Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
TJ, T
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 48.0 A
Single Pulsed Avalanche Energy (Note 2) 355 mJ
Avalanche Current 5.3 A
Repetitive Avalanche Energy 1.34 mJ
MOSFET dv/dt Ruggedness 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20 V/ns
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TC = 25oC unless otherwise noted*
-Continuous (TC = 25oC) 16.0
-Continuous (TC = 100oC) 10.1
(TC = 25oC) 134.4 W
- Derate above 25oC 1.08 W/oC
300
Thermal Characteristics
Symbol Parameter FCA16N60N Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.93
Thermal Resistance, Case to Heat Sink (Typical) 0.24
Thermal Resistance, Junction to Ambient 40
A
o
C
o
C
o
C/WR
©2009 Fairchild Semiconductor Corporation
FCA16N60N Rev. A1
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FCA16N60N FCA16N60N TO-3PN - - 30
FCA16N60N N-Channel MOSFET
Electrical Characteristics
TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
ID = 1mA, Referenced to 25oC - 0.73 - V/oC
VDS = 480V, V
VDS = 480V, V
= 0V - - 10
GS
= 0V, TC = 125oC - - 100
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 8A - 0.170 0.199 Ω
Forward Transconductance VDS = 40V, ID = 8A - 20 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss
C
eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 176 - pF
oss
Q
g(tot)
Q
gs
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open 2.9 Ω
Input Capacitance
Output Capacitance - 70 95 pF
Reverse Transfer Capacitance - 5 10 pF
VDS = 100V, VGS = 0V
f = 1MHz
- 1630 2170 pF
Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 40 60 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 6.7 - nC
Gate to Drain “Miller” Charge - 12.9 - nC
VDS = 380V, ID = 8A,
VGS = 10V
(Note 4)
- 40.2 52.3 nC
µA
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15.5 41.0 ns
Turn-Off Delay Time - 60.3 130.6 ns
Turn-Off Fall Time - 20.2 50.4 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5.3A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD = 380V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 16 A
Maximum Pulsed Drain to Source Diode Forward Current - - 48 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 4.4 - µC
VDD = 380V, ID = 8A
RG = 4.7Ω
(Note 4)
= 0V, I
GS
VGS = 0V, I
= 8A - - 1.2 V
SD
= 8A
SD
dIF/dt = 100A/µs
- 15.8 41.6 ns
- 319 - ns
FCA16N60N Rev. A1 www.fairchildsemi.com2
Typical Performance Characteristics
0.1 1 10 20
0.1
1
10
100
*Notes:
1. 250
µµµµ
s Pulse Test
2. TC = 25oC
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
2 4 6 8
0.1
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250
µµµµ
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 10 20 30 40 50
0.1
0.2
0.3
0.4
0.5
0.6
*Notes: T
C
= 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[
Ω
Ω
Ω
Ω
]
,
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
*Notes:
1. VGS = 0V
2. 250
µµµµ
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100 600
0
2500
5000
7500
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted
)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Notes:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 10 20 30 40 50
0
2
4
6
8
10
*Notes: I
D
= 8A
VDS = 120V
VDS = 380V
VDS = 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FCA16N60N N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FCA16N60N Rev. A1 www.fairchildsemi.com3
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