Fairchild BCW68G service manual
BCW68G
C
E
SOT-23
Mark: DG
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA. Sourced from Process 63.
B
BCW68G
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 45 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 800 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BCW68G
P
D
R
JA
θ
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
C/W
°
3
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF Noise Figure IC = 0.2 mA V, VCE = 5.0 V,
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 45 V
Voltage
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA
C
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
60 V
60 V
5.0 V
Collector-Cutoff Current VCE = 45 V
= 45 V, TA = 150 °C
V
CE
Emitter-Cutoff Current VEB = 4.0 V 20 nA
DC Current Gain IC = 10 mA, VCE = 1.0 V
I
= 100 mA, VCE = 1.0 V
C
= 300 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 300 mA, IB = 30 mA 1.5 V
)
Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 2.0 V
)
C
Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
120
160
60
100 MHz
f = 100 MHz
Ouput Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 18 pF
Input Capacitance VEB = 0.5 V, IE = 0, f = 1.0 MHz 105 pF
R
= 1.0 kΩ, f = 1.0 kHz,
S
B
= 200 Hz
W
20
10
400
10 dB
nA
µ
A
BCW68G
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=1 1 1.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
T ypical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
200
100
FE
h - TYPICAL PULSED CURRENT GAIN
25 °C
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Coll ector-Em itt er Sa turatio n
Voltag e vs Co llector Cur rent
0.5
0.4
0.3
0.2
0.1
CESAT
V - COLLECTOR EMITTER VOLTAGE (V)
= 10
β
25 °C
125 °C
0
110100500
I - COLLECTOR CURRENT (mA)
C
- 40 °C
Typical Characteristics (continued)
BCW68G
PNP General Purpose Amplifier
(continued)
Bas e-Em itt er Satur atio n
Voltag e vs C o ll ector Current
1
- 40 °C
0.8
0.6
0.4
0.2
BESAT
0
V - BASE EMITTE R VOLTAGE (V)
110100500
25 °C
125 °C
I - COLLEC TOR CURRENT (mA)
C
β
= 10
Co llect or-Cu to ff Curre nt
vs Amb ie nt Temp er ature
100
V = 35V
CB
10
1
0.1
CBO
I - COLLECTOR CU RREN T (nA)
0.01
25 50 75 100 125
T - A MBIE NT TE MP ER ATUR E ( C)
A
°
Base Emitter ON Voltage vs
Co ll ector Current
1
0.8
0.6
0.4
0.2
0
BE( ON)
V - BASE EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
V = 5V
CE
0.1 1 10 25
I - COLLECTOR CURRENT (mA)
C
Input and Output Capacitance
vs Reverse Bias Voltage
20
16
12
8
CAPACITANCE (pF)
4
0
0.1 1 10 50
REVERSE BIAS VOLTAGE (V)
C
ib
C
ob
3
Swi t c hing Times
vs Collector Current
250
I = I =
200
V = 15 V
150
100
TIME (nS)
50
0
10 100 1000
I
B1CB2
cc
c
10
t
f
t
r
t
d
I - COLLECTOR CURRENT (mA)
t
s
Turn On and Turn Off Times
vs Collector C urrent
500
I = I =
400
V = 15 V
300
200
TIME (nS)
100
0
10 100 1000
I
B1CB2
cc
c
10
t
on
I - COLLECTOR CU RRENT (mA)
t
off
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