Fairchild BCV72 service manual
BCV72
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
currents to 300mA.
• Sourced from process 10.
3
2
SOT-23
1
Mark: K8
1. Base 2. Emitter 3. Collector
BCV72
Absolute Maximum Ratings *
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage 60 V
Collector-Base Voltage 80 V
Emitter-Base Voltage 5.0 V
Collector current (DC) 500 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Ta=25°C unless otherwise noted
Symbol Parameter T est Condition Min. Max. Units
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 80 V
Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 60 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V
Collector Cutoff Current VCB = 20V, IE = 0
= 20V, IE = 0, Ta = 100°C
V
CB
100
10
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain IC = 2.0mA, VCE = 5.0V 200 450
Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.25 V
Base-Emitter On Voltage IC = 2.0mA, VCE = 5.0V 0.55 0.7 V
nA
µA
Thermal Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
Device mounted on FR-4PCB 40mm × 40mm × 1.5mm
©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Ambient 357 °C/W
Package Dimensions
0.40
±0.03
BCV72
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
Rev. A, April 2004©2004 Fairchild Semiconductor Corporation
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