BCV27
C
BCV27
E
SOT-23
Mark: FF
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emit t er Vol t age 30 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1.2 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
3
Symbol Characteristic Max Units
*BCV27
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance , Junctio n to Ambien t 357
350
2.8
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
mW
mW/°C
C/W
°
µ
µ
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(
)
sat
V
sat
BE(
)
SMALL SIGNAL CHARACTERISTICS
f
T
C
C
Collector-Emitt er Breakdown Voltage IC = 10 mA, IB = 0 30 V
Collector-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
40 V
Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
Collector-Cutoff Current VCB = 30 V, IE = 0 0.1
Emitte r-Cutoff Current VEB = 10 V, IC = 0 0.1
DC Current Gain IC = 1.0 mA, VCE = 5.0 V
I
= 10 mA, VCE = 5.0 V
C
I
= 100 mA, VCE = 5.0 V
C
4,000
10,000
20,000
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
Current Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V,
220 MHz
f = 100 MHz
Collector Capacitan ce VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF
BCV27
A
A
T ypical Characteristics
Typical Pu lse d Cu rr en t Gai n
vs Collector Current
250
V = 5V
CE
200
150
100
50
0
0.001 0.01 0.1 1
FE
h - TYPICAL PULSED CURRENT GAIN (K)
- 40 °C
I - COLLECTOR CURRENT (A)
25 °C
C
Base-Emitt er Sa turatio n
Voltage vs Collector Cur re nt
2
= 1000
β
1.6
1.2
0.8
0.4
- 40 °C
25 °C
125 °C
125 °C
Co ll ecto r - Em itter Saturatio n
Voltage vs Collector Current
1.6
= 1000
β
1.2
- 40 °C
0.8
25°C
0.4
0
1 10 100 1000
CES AT
V - COLLEC TOR EMITTER VOL TAG E (V)
I - COLLECTOR CURRENT (mA)
C
125 °C
Base Emitter ON Voltage vs
Collector Curre nt
2
1.6
1.2
0.8
0.4
- 40 °C
25 °C
125 °C
V = 5V
CE
BESAT
0
V - BASE EMITTER VOLTAGE (V)
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
0
BEON
1 10 100 1000
V - BASE EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRE NT (mA)
C
Typical Characteristics (continued)
BCV27
NPN Darlington Transistor
(continued)
Co ll ector -C u toff Cur re nt
vs Amb ie nt Temp eratu re
100
V = 30 V
CB
10
1
0.1
CBO
I - COLLE CT OR CU RRE N T (nA)
0.01
25 50 75 100 125
T - AMBIE NT TEMPERATURE ( C)
A
°
Input and Output Capacitance
vs R ev erse Voltage
20
10
5
CAPACITANCE (pF)
f = 1.0 MHz
Cib
Cob
Collector- E mi t te r Br ea kd o w n
Voltage with Resistance
Between Emitter -Ba se
62.5
62
61.5
61
60.5
60
CER
59.5
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
Ω
Gain Bandwidth Product
vs Collec tor Current
500
V = 5V
ce
400
300
200
100
3
2
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
Power Dissipation vs
Ambient T emperature
350
300
250
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
SOT-23
o
0
T
1102050100150
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
SOT-23 Packaging
Configuration: Figure 1.0
Components
Leader Tape
500mm minimum or
125 empty pockets
Trailer Tape
300mm minimum or
75 empty pocket s
SOT-23 Tape Leader and Trailer
Configuration: Figur e 2.0
Cover Tape
Carrier Tape
Note/Comments
Packa ging Option
SOT-23 Packaging Information
Stan dard
(no flow code)
D87Z
Packa ging type
Reel Size
TNR
7" Dia
TNR
13"
Qty per Reel/Tube/Bag
3,000 10,000
Box Dimens i on (mm)
187x107x183 343x343x64
Max qty per B o x
24,000 30,000
Weight per unit (gm)
0.0082 0.0082
Weight per Reel (kg)
0.1175 0.4006
Human readable
Label
Human Readable Label
Human Readable Label sample
343mm x 342mm x 64mm
Intermediate box for L87Z Option
187mm x 107mm x 183mm
Intermediate Box for Standard Option
SOT-23 Unit Orientation
3P 3P 3P 3P
Human Readable
Label
Customized Label
Embossed
Carrier Tape
Antistatic Cover Tape
Packaging Description:
SOT-23
made from a dissipative (carbon fil led) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 uni ts per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other opti ons are
described in the Packaging Information table.
These full reels are individually labeled and placed insi de
a standard inter mediate made of recycl abl e corrugated
brown paper with a Fairchil d l ogo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a label ed shipping box which
comes i n diff erent sizes depending on the number of parts
shipped.
parts are shipped in tape. The carrier tape is
SOT-23 Tape and Reel Data
©2000 Fairchild Semiconductor International
September 1999, Rev. C
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Confi guration: Figure 3.0
T
B0
Wc
D0P0 P2
D1
E1
W
F
E2
Tc
K0
P1
A0
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOT-23
(8mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
SOT-23 Reel Configuration: Figure 4.0
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
3.15
2.77
8.0
1.55
1.125
1.75
6.25
+/-0.10
+/-0.10
+/-0.3
+/-0.05
+/-0.125
+/-0.10
3.50
min
+/-0.05
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
B0
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
W1 Measured at Hub
A0
Sketch B (Top View)
Component Rotation
4.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
4.0
+/-0.1
1.30
0.228
+/-0.013
5.2
+/-0.3
0.5mm
maximum
+/-0.10
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
0.06
+/-0.02
Dim A
max
Tape Size
8mm 7" Dia
8mm 13 " Dia
Reel
Option
Dim N
Diameter Option
7"
See detail AA
B Min
Dim C
13" Diameter Option
See detail AA
W2 max Measured at Hub
W3
Dim D
min
DETAIL AA
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
7.00
0.059
177.8
13.00
330
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
0.795
2.165550.331 +0.059/-0.000
20.2
0.795
4.00
20.2
100
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
September 1998, Rev . A1
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DOME™
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TM
TM
FACT™
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FASTr™
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GTO™
HiSeC™
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P ACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
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failure to perform when properly used in accordance
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reasonably expected to result in significant injury to the
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2. A critical component is any component of a life
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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