Fairchild BCV27 service manual
BCV27
C
BCV27
E
SOT-23
Mark: FF
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emit t er Vol t age 30 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 10 V
Collector Current - Continuous 1.2 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
3
Symbol Characteristic Max Units
*BCV27
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance , Junctio n to Ambien t 357
350
2.8
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
mW
mW/°C
C/W
°
µ
µ
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(
)
sat
V
sat
BE(
)
SMALL SIGNAL CHARACTERISTICS
f
T
C
C
Collector-Emitt er Breakdown Voltage IC = 10 mA, IB = 0 30 V
Collector-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
40 V
Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
Collector-Cutoff Current VCB = 30 V, IE = 0 0.1
Emitte r-Cutoff Current VEB = 10 V, IC = 0 0.1
DC Current Gain IC = 1.0 mA, VCE = 5.0 V
I
= 10 mA, VCE = 5.0 V
C
I
= 100 mA, VCE = 5.0 V
C
4,000
10,000
20,000
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V
Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V
Current Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V,
220 MHz
f = 100 MHz
Collector Capacitan ce VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF
BCV27
A
A
T ypical Characteristics
Typical Pu lse d Cu rr en t Gai n
vs Collector Current
250
V = 5V
CE
200
150
100
50
0
0.001 0.01 0.1 1
FE
h - TYPICAL PULSED CURRENT GAIN (K)
- 40 °C
I - COLLECTOR CURRENT (A)
25 °C
C
Base-Emitt er Sa turatio n
Voltage vs Collector Cur re nt
2
= 1000
β
1.6
1.2
0.8
0.4
- 40 °C
25 °C
125 °C
125 °C
Co ll ecto r - Em itter Saturatio n
Voltage vs Collector Current
1.6
= 1000
β
1.2
- 40 °C
0.8
25°C
0.4
0
1 10 100 1000
CES AT
V - COLLEC TOR EMITTER VOL TAG E (V)
I - COLLECTOR CURRENT (mA)
C
125 °C
Base Emitter ON Voltage vs
Collector Curre nt
2
1.6
1.2
0.8
0.4
- 40 °C
25 °C
125 °C
V = 5V
CE
BESAT
0
V - BASE EMITTER VOLTAGE (V)
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
0
BEON
1 10 100 1000
V - BASE EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRE NT (mA)
C
Typical Characteristics (continued)
BCV27
NPN Darlington Transistor
(continued)
Co ll ector -C u toff Cur re nt
vs Amb ie nt Temp eratu re
100
V = 30 V
CB
10
1
0.1
CBO
I - COLLE CT OR CU RRE N T (nA)
0.01
25 50 75 100 125
T - AMBIE NT TEMPERATURE ( C)
A
°
Input and Output Capacitance
vs R ev erse Voltage
20
10
5
CAPACITANCE (pF)
f = 1.0 MHz
Cib
Cob
Collector- E mi t te r Br ea kd o w n
Voltage with Resistance
Between Emitter -Ba se
62.5
62
61.5
61
60.5
60
CER
59.5
0.1 1 10 100 1000
BV - BREAKDOWN VOLTAGE (V)
RESISTANCE (k )
Ω
Gain Bandwidth Product
vs Collec tor Current
500
V = 5V
ce
400
300
200
100
3
2
0.1 1 10 100
V - COLLECTOR VOLTAGE(V)
Power Dissipation vs
Ambient T emperature
350
300
250
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
SOT-23
o
0
T
1102050100150
f - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
Loading...