Fairchild BCP69 service manual
BCP69
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 1.0A.
• Sourced from Process 77.
January 2007
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
BCP69 PNP General Purpose Amplifier
Absolute Maximum Ratings* T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
Symbol Parameter Value
P
D
R
θJA
* Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
Electrical Characteristics* T
Collector-Emitter Voltage -20 V
Collector-Base Voltage -30 V
Emitter-Base Voltage -5.0 V
Collector Current - Continuous -1.5 A
Junction Temperature 150 °C
Storage Temperature Range - 55 ~ +150 °C
=25°C unless otherwise noted
a
Units
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 125 °C/W
2
= 25°C unless otherwise noted
a
1.0
8.0
W
mW/°C
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
C
cb
h
fe
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -20 V
Collector-Base Breakdown Voltage IC = -1.0mA, IE = 0 -30 V
Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V
Collector-Base Cutoff Current VCB = -25V, IE = 0
VCB = -25V, IE = 0, Tj = 150oC
-100
-10
nA
uA
Emitter-Base Cutoff Current VEB = -5.0V, IC = 0 -100 nA
DC Current Gain IC = -5mA, VCE = -1.0V
IC = -500mA, VCE = -1.0V
IC = -1.0A, VCE = -1.0V
50
85
60
375
Collector-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -0.5 V
Base-Emitter On Voltage IC = -1.0A, VCE = -1.0V -1.0 V
Collector-Base Capacitance VCB = -10V, IE = 0, f = 1.0MHz 30 pF
Small-Signal Current Gain IC = -50mA, VCE = -10V, f = 20MHz 2.5
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BCP69 Rev. B
0
Typical Performance Characteristics
BCP69 PNP General Purpose Amplifier
Typical Puls ed Curr ent Gain
vs Collector Current
300
V = 5.0V
CE
125 °C
25 °C
50
0
- 40 °C
0.01 0.1 1 2
I - COLLEC TOR CU RRE NT (A)
C
h - TYPICAL PULSED CURRENT GAIN
250
200
150
100
FE
Bas e-Emitter Sat u ra tion
Voltage vs Collector Current
= 10
β
1
0.8
0.6
0.4
BESAT
V - BASE-EMITTER VOLTAGE (V)
- 40 °C
25 °C
125 °C
1 10 100 1000
I - COLLECTOR CURRE NT (mA )
C
Col le cto r-Emitter Satu r ati on
V o ltage v s C o lle cto r Current
1
= 10
β
0.8
0.6
0.4
0.2
0
0.01 0.1 1 3
CESAT
V - COL LECTO R-EMITTER VOLTA G E (V)
I - COLLECTOR CURRENT (A)
C
- 40 °C
25 °C
125 °C
Base-Emitter ON V oltage vs
Collector Current
1
0.8
0.6
0.4
0.2
BE(ON)
110100100
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25°C
125°C
I - COLLECTOR CURRENT (mA)
C
V = 5.0 V
CE
BCP69 Rev. B
Collector-Cutoff Current
vs Ambient Tem per ature
100
V = 20V
CB
10
1
0.1
CBO
I - COLLECTOR CURR ENT (nA)
25 50 75 100 125 150
T - AM BI E N T TE MP E RATU R E ( C)
A
°
Collector-Base Capacitance
vs Collector-Base Voltage
40
30
20
10
0
0102030
OBO
C - COLLECTOR-BASE CAPACITANCE (pF)
V - COLLECTOR-BASE VOLTA GE ( V )
CB
2 www.fairchildsemi.com
f = 1.0 MHz
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