Fairchild BCP55 service manual
BCP55
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.
BCP55
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symb ol Parame t er Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristi c Max Units
BCP55
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 83.3
1.5
12
W
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 60 V
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
= 100 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
60 V
5.0 V
Co llecto r-Cu toff Curr e nt VCB = 30 V, IE = 0
= 30 V, IE = 0, TA = 125°C
V
CB
Emitte r-C u toff Cu rr e n t VEB = 5.0 V, IC = 0 10
DC Current Gain IC = 5.0 mA, VCE = 2.0 V
= 150 mA, VCE = 2.0 V
I
C
= 500 mA, VCE = 2.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
)
C
25
40
25
Base-Emitter On Voltage IC = 500 mA, VCE = 2.0 V 1.0 V
100
10
250
nA
µ
µ
A
A
BCP55
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