Fairchild BCP54 service manual
BCP54
C
E
C
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.2 A. Sourced from Process 38.
BCP54
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 45 V
Collector-Base Voltage 45 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BCP54
P
D
R
θ
JA
Total Devi ce Dissipat ion
Derate above 25°C
Thermal Resistance , Junctio n to Ambient 83.3
1.5
12
W
mW/°C
C/W
°
3
1997 Fairchild Semiconductor Corporation
µ
µ
NPN General Purpose Amplifier
(continued)
BCP54
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Volta ge IC = 10 mA, IB = 045V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 30 V, IE = 0
= 30 V, IE = 0, TA = 125°C
V
CB
Emitte r-Cutoff Current VEB = 5.0 V, IC = 0 10
45 V
5.0 V
100
10
nA
A
A
ON CHARACTERISTICS
h
V
V
FE
CE(
BE(on)
sat
DC Current Gain IC = 5.0 mA, VCE = 2.0 V
I
= 150 mA, VCE = 2.0 V
C
= 500 mA, VCE = 2.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
)
C
Base-Emitter On Vol t age IC = 500 mA, VCE = 2.0 V 1.0 V
25
40
25
250
T ypical Characteristics
Typical Puls ed Curr ent Gain
vs Collector Current
500
V = 5V
CE
125 °C
25 °C
- 40 °C
0
0.001 0 .01 0.1 1 2
I - COLLEC TOR CU RR ENT ( A)
C
h - TYPI CAL PULSED CURR ENT GA IN
400
300
200
100
FE
Colle cto r-Emi tter Satu r ation
Voltage vs Collector Current
0.6
= 10
β
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 3
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COL L E CTO R C U RREN T (A)
C
25°C
125 °
C
- 4 0 °C
Typical Characteristics (continued)
BCP54
NPN General Purpose Amplifier
(continued)
Bas e-Emitter Satura tion
Vo lta ge vs Collec to r Curr ent
β = 10
1.2
1
0.8
0.6
- 40 °C
25°C
125 °
C
0.4
BESAT
0.2
V - BASE-EMITTER VOLTAG E (V)
1 10 100 1000
I - COLLE C TOR CURR ENT (mA)
C
Collector-Cutoff Cur rent
vs Ambien t Temperature
100
V = 40V
CB
10
1
0.1
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25°C
125 °
C
V = 5V
CE
0.001 0.01 0.1 1
I - COLLECTOR CURRENT (A)
C
Collector-Bas e Cap ac ita n ce
vs Collector-Base Vol tage
40
30
20
10
3
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AM BI ENT TE MPE RATU R E ( C)
A
°
Gain Bandwidth Product
vs Collector Current
500
V = 10V
CE
400
300
200
100
0
FE
1 10 100 1000
h - GAIN BANDW IDTH PRODUCT (MHz)
I - COLLE CTO R CUR REN T (mA)
C
0
0 4 8 1216202428
OBO
V - COLL ECTOR -BASE VOLTAGE (V )
- COLLECTOR-B A SE CAPAC ITANCE (pF)
CB
Power Dissipation vs
Ambient Temperature
1.5
1.25
1
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 25 50 75 100 125 150
SOT-223
TEMPERATURE ( C)
o
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