Fairchild BCP52 service manual
BCP52
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78.
BCP52
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.2 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BCP52
P
D
R
θ
JA
Total Devi ce Dissipat ion
Derate above 25°C
Thermal Resistance , Junctio n to Ambient 83.3
1.5
12
W
mW/°C
C/W
°
3
1997 Fairchild Semiconductor Corporation
PNP General Purpose Amplifier
µ
µ
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Collector-Emitter Breakdown Volta ge IC = 10 mA, IB = 060V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 30 V, IE = 0
V
= 30 V, IE = 0, TA = 125°C
CB
Emitte r-Cutoff Current VEB = 5.0 V, IC = 0 10
DC Current Gain IC = 5.0 mA, VCE = 2.0 V
I
= 150 mA, VCE = 2.0 V
C
= 500 mA, VCE = 2.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V
)
C
60 V
5.0 V
100
10
25
40
250
25
nA
A
A
Base-Emitter On Vol t age IC = 500 mA, VCE = 2.0 V 1.0 V
BCP52
T ypical Characteristics
Typi cal Pulsed Curr ent Gai n
vs Collector Current
400
300
200
h - TYPICAL PU LSED CURRENT GAIN
100
FE
- 40 °C
0
0.01 0.1 1
I - COLLECTOR CU RRENT (A)
C
125 °C
25 °C
V = 5V
CE
Coll ecto r -Emi tter Satur ati on
Volta ge vs Collector Current
0.6
= 10
β
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 1.5
CESAT
V - COLLE CTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
- 40 °C
25 °C
125 °C
Typical Characteristics (continued)
BCP52
PNP General Purpose Amplifier
(continued)
Base-Emitter Sat u ra ti o n
Voltage vs Collector Current
β
= 10
1
0.8
- 40 °C
25 °C
0.6
0.4
125 °C
BE SAT
V - BASE-EMITTER VOLTAGE (V)
1 10 100 1000
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs Amb ient Tem per ature
100
V = 40V
CB
10
1
0.1
Base- Emitter ON Vo ltag e vs
Co llect or Cur rent
1
0.8
- 40 °C
0.6
0.4
0.2
BE(ON)
1 10 100 1000
V - B ASE-EMITTER ON VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
25 °C
125 °C
V = 5V
CE
Collector-Base Capacitance
vs Collector-Base Voltage
40
30
20
10
f = 1.0 MHz
3
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AM BIENT TE MPERATURE ( C)
A
°
Gain Bandwidth Product
vs Collector Current
250
V = 10V
CE
200
150
100
50
0
FE
1 10 100 1000
h - GAIN BANDW IDTH PROD UCT ( M Hz)
I - COLLE CTO R CUR REN T (mA)
C
0
0 4 8 1216202428
obo
V - COL LECTOR- BASE VOLTAGE (V)
- COLLECTOR-BASE CAPACITANCE (pF)
CB
Power Dissipation vs
Ambient Te mperature
1.5
1.25
1
0.75
0.5
0.25
D
P - POWER DISSIPATION (W)
0
0 255075100125150
SOT-223
TEMPERATURE ( C)
o
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