Fairchild BC817-25, BC817-40, BC817-25, BC817-40 Schematic [ru]
BC817-25
BC817-40
C
BC817-25 / BC817-40
E
SOT-23
Mark: 6B. / 6C.
B
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CES
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 1.5 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
3
Symbol Characteristic Max Units
*BC817-25 / BC817-40
P
D
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance , Junctio n to Ambient 357
350
2.8
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
mW
mW/°C
C/W
°
µ
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakd own Voltage IC = 10 mA, IB = 045V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
= 100 µA, IE = 0
I
C
I
= 10 µA, IC = 0
E
Collector-Cutoff Current VCB = 20 V
V
= 20 V, TA = 150°C
CB
DC Current Gain IC = 100 mA, VCE = 1.0 V
- 25
- 40
= 500 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.7 V
)
C
50 V
5.0 V
100
5.0
160
250
400
600
40
nA
A
Base-Emitter On Voltage IC = 500 mA, VCE = 1.0 V 1.2 V
BC817-25 / BC817-40
T ypical Characteristics
Typical Pulsed Curr ent Gai n
vs Collector Current
500
V = 5V
CE
125 °C
25 °C
- 40 °C
0
0.001 0.01 0.1 1 2
I - COLLE C TOR CU RR ENT ( A)
C
h - TYPICA L PULSED CU RRENT GAIN
400
300
200
100
FE
Colle cto r-Emit ter Satu r ation
Voltage vs Collector Current
0.6
= 10
β
0.5
0.4
0.3
0.2
0.1
0
0.01 0.1 1 3
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (A)
C
25°C
125 °
C
- 4 0 °C
Typical Characteristics (continued)
BC817-25 / BC817-40
NPN General Purpose Amplifier
(continued)
Bas e-Emitter Satu ra ti o n
Vo lta ge vs Coll ec tor Curr ent
β = 10
1.2
1
0.8
0.6
- 40 °C
25°C
125 °
C
0.4
BESAT
0.2
V - BASE-EMITTER VOLTAGE (V)
1 10 100 1000
I - COLLEC TOR CURR ENT (mA)
C
Collector-Cutoff Current
vs Ambien t Tem perature
100
V = 40V
CB
10
1
0.1
Base-Emitter ON V oltage vs
Collector Current
1
0.8
0.6
0.4
0.2
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25°C
125 °
C
V = 5V
CE
0.001 0.01 0.1 1
I - COLLECTOR CURRENT (A)
C
Collector-Base Capacitance
vs Collector-Base Vol tage
40
30
20
10
3
CBO
I - COLLECTOR CURRENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
°
Gain Bandwidth Product
vs Co ll ec t or Current
500
V = 10V
CE
400
300
200
100
0
FE
1 10 100 1000
h - GAIN BANDWIDTH PRODUCT (MHz)
I - COLLECTOR CURRENT (mA)
C
0
0 4 8 1216202428
OBO
- CO LLECTOR-BA SE CA PAC I TANCE (pF)
V - COLLEC TOR-B ASE VO LTAGE ( V )
CB
Power Dissipation vs
Ambient Temperature
350
300
250
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
SOT-23
o
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