Fairchild BC807-16, BC807-25, BC807-40, BC808-16, BC808-25 Schematic

BC807/BC808

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages

• Complement to BC817/BC818

PNP Epitaxial Silicon Transistor

3

2

SOT-23

1

1. Base 2. Emitter 3. Collector

BC807/BC808

Absolute Maximum Ratings

Ta=25°C unless otherwise noted

Symbol Parameter Value Units

V

CES

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Electrical Characteristics

Collector-Emitter Voltage

: BC807 : BC808

-50

-30

Collector-Emitter Voltage

: BC807 : BC808

-45

-25 Emitter-Base Voltage -5 V Collector Current (DC) -800 mA Collector Power Dissipation -310 mW Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C

Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CEO

BV

CES

BV

EBO

I

CES

I

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V

V

CE

(on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V

V

BE

f

T

C

ob

Collector-Emitter Breakdown Voltage

: BC807 : BC808

Collector-Emitter Breakdown Voltage

: BC807 : BC808

IC= -10mA, IB=0

-45

-25

IC= -0.1mA, VBE=0

-50

-30 Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V Collector Cut-off Current VCE= -25V, VBE=0 -100 nA Emitter Cut-off Current VEB= -4V, IC=0 -100 nA DC Current Gain VCE= -1V, IC= -100mA

V

= -1V, IC= -300mA

CE

Current Gain Bandwidth Product VCE= -5V, IC= -10mA

f=50MHz

100

60

630

100

Output Capacitance VCB= -10V, f=1MHz 12 pF

V V

MHz

h

Classification

FE

Classification 16 25 40

h

FE1

h

FE2

100 ~ 250 160 ~ 400 250 ~ 630

60- 100- 170-

Marking Code

Type 807-16 807-25 807-40 808-16 808-25 808-40

Marking 9FA 9FB 9FC 9GA 9GB 9GC

BC807/BC808

Typical Characteristics

BC807/BC808

= - 5.0mA

I

B

= - 4.5mA

B

I

= - 4.0mA

B

I

IB = - 1.0mA

IB = - 0.5mA

= - 3.5mA

B

= - 3.0mA

B

I

= - 2.5mA

B

I

B

IB = 0

= - 2.0mA

I

B

= - 1.5mA

-500

-400

-300

-200

-100

[mA], COLLECTOR CURRENT

C

I

-0

-0 -1 -2 -3 -4 -5

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Static Characteristic

1000

100

10

, DC CURRENT GAIN

FE

h

1

-0.1 -1 -10 -100 -1000

IC[mA], COLLECTOR CURRENT

P

= 600mW

T

PULSE

VCE = - 2.0V

- 1.0V

= - 50

I

B

µ

I

B

A

µ

= - 10

P

= 600mW

T

A

µ

A

µ

A

µ

A

µ

= - 40

I

B

= - 30

I

B

= - 20

I

B

IB = 0

-20

-16

-12

I

B

= - 80

I

B

A

µ

= - 70

µ

= - 60

I

B

A

-8

[mA], COLLECTOR CURRENT

-4

C

I

-0

-0 -10 -20 -30 -40 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE(sat)

VCE(sat)

IC = 10 I PULSE

B

-10

-1

-0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

-0.01

-0.1 -1 -10 -100 -1000

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

-1000

VCE = -1V PULSE

-100

-10

-1

[mA], COLLECTOR CURRENT

C

I

-0.1

-0.4 -0.5 -0.6 -0.7 -0.8 -0.9

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance

Collector-Emitter Saturation Voltage

100

10

[pF], CAPACITANCE

ob

, C

ib

C

1

-0.1 -1 -10 -100

VCB[V], COLLECTOR-BASE VOLTAGE

V

[V], EMITTER-BASE VOLTAGE

EB

f = 1.0MHz

C

ib

C

ob

Rev. A2, August 2002

Fairchild BC807-16, BC807-25, BC807-40, BC808-16, BC808-25 Schematic [ru]