Fairchild BC807, BC808 service manual
查询BC80716供应商
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
PNP Epitaxial Silicon Transistor
BC807/BC808
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
BC807/BC808
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CES
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -5 V
Collector Current (DC) -800 mA
Collector Power Dissipation -310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
V
CE
(on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage
: BC807
: BC808
Collector-Emitter Breakdown Voltage
: BC807
: BC808
Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V
Collector Cut-off Current VCE= -25V, VBE=0 -100 nA
Emitter Cut-off Current VEB= -4V, IC=0 -100 nA
DC Current Gain VCE= -1V, IC= -100mA
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
Output Capacitance VCB= -10V, f=1MHz 12 pF
Ta=25°C unless otherwise noted
: BC807
: BC808
: BC807
: BC808
Ta=25°C unless otherwise noted
IC= -10mA, IB=0
IC= -0.1mA, VBE=0
V
= -1V, IC= -300mA
CE
f=50MHz
-45
-25
-50
-30
100
60
-50
-30
-45
-25
630
100
V
V
V
V
V
V
V
V
MHz
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
100 ~ 250 160 ~ 400 250 ~ 630
60- 100- 170-
Marking Code
Type 807-16 807-25 807-40 808-16 808-25 808-40
Marking 9FA 9FB 9FC 9GA 9GB 9GC
BC807/BC808
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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