Fairchild BC640 service manual
BC640
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC639
BC640 — PNP Epitaxial Silicon Transistor
March 2009
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics T
Collector-Emitter Voltage at RBE=1KΩ -100 V
Collector-Emitter Voltage -100 V
Collector-Emitter Voltage -80 V
Emitter-Base Voltage -5 V
Collector Current -1 A
Peak Collector Current -1.5 A
Base Current -100 mA
Collector Power Dissipation 1 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.5 V
CE
(on) Base-Emitter On Voltage VCE= -2V, IC= -500mA -1 V
V
BE
f
T
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -80 V
Collector Cut-off Current VCB= -30V, IE=0 -0.1 μA
Emitter Cut-off Current VEB= -5V, IC=0 -10 μA
DC Current Gain VCE= -2V, IC= -5mA
V
= -2V, IC= -150mA
CE
V
= -2V, IC= -500mA
CE
Current Gain Bandwidth Product VCE= -5V, IC= -10mA,
25
40
25
160
100 MHz
f=50MHz
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC640 Rev. C3 1
Package Marking and Ordering Information
Device Marking Device Package
BC640 BC640 TO-92
BC640 BC640BU TO-92
BC640 BC640TA TO-92
BC640 BC640TAR TO-92
BC640 B C640TF TO-92
BC640 BC640TFR TO-92
BC640 BC640_J35Z TO-92
BC640 BC640_J61Z TO-92
BC640 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC640 Rev. C3 2
Loading...