Fairchild BC63916 service manual
BC63916
Switching and Amplifier Applications
BC63916
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CER
V
CES
V
CEO
V
EBO
I
C
P
C
, T
T
J
STG
• PW=5ms, Duty Cycle=10%
Collector-Emitter Voltage at RBE=1KΩ 100 V
Collector-Emitter Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current 1 A
Collector Power Dissipation 1 W
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 0.5 V
V
CE
(on) Base-Emitter On Voltage V
V
BE
f
T
Collector-Base Breakdown Voltage IC = 100µA, IE = 0 100 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= 30V, IE = 0 100 nA
CB
= 5V, IC = 0 10 µA
EB
= 2V, IC = 5mA
CE
= 2V, IC = 150mA
V
CE
V
= 2V, IC = 500mA
CE
= 2V, IC = 500mA 1 V
CE
= 5V, IC=10mA,
CE
f = 50MHz
25
100
25
250
100 MHz
©2003 Fairchild Semiconductor Corporation Rev. A, January 2003
Package Dimensions
TO-92
BC63916
;
*
*
Note: All package 97 or 98 transistors are leadformed
to this configuration prior to bulk shipment. Order
L34Z option if in-line leads are preferred on package
97 or 98.
* Standard Option on 97 & 98 package code
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
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