Fairchild BC556, BC557, BC558, BC559, BC560 service manual
Switching and Amplifier
• High Voltage: BC556, V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
CEO
= -65V
BC556/557/558/559/560
BC556/557/558/559/560
1
1. Collector 2. Base 3. Emitter
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -5 V
Collector Current (DC) -100 mA
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
I
CBO
h
FE
V
CE
(sat)
V
BE
V
BE
f
T
C
ob
NF Noise Figure : BC556/557/558
Collector Cut-off Current VCB= -30V, IE=0 -15 nA
DC Current Gain VCE= -5V, IC=2mA 110 800
Collector-Emitter Saturation Voltage I
(sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA
(on) Base-Emitter On Voltage
Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
: BC559/560
: BC559
: BC560
Ta=25°C unless otherwise noted
: BC556
: BC557/560
: BC558/559
: BC556
: BC557/560
: BC558/559
Ta=25°C unless otherwise noted
= -10mA, IB= -0.5mA
C
I
= -100mA, IB= -5mA
C
= -100mA, IB= -5mA
I
C
VCE= -5V, IC= -2mA
= -5V, IC= -10mA
V
CE
= -5V, IC= -200µA
V
CE
f=1KHz, R
V
CE
=2KΩ, f=30~15000MHz
R
G
=2KΩ
G
= -5V, IC= -200µA
-80
-50
-30
-65
-45
-30
-90
-250
-700
-900
-600 -660 -750
1.2
1.2
2
1
-300
-650mVmV
-800mVmV
10
4
4
2
V
V
V
V
V
V
mV
mV
dB
dB
dB
dB
h
Classification
FE
Classification A B C
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
110 ~ 220 200 ~ 450 420 ~ 800
Typical Characteristics
BC556/557/558/559/560
-50
-45
-40
-35
-30
-25
-20
-15
[mA], COLLECTOR CURRENT
-10
C
I
-5
-0
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = -400µA
IB = -350µA
IB = -300µA
IB = -250µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
IC = -10 I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
1000
VCE = -5V
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
-100
VCE = -5V
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
10
(pF), CAPACITANCE
ob
C
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
f=1MHz
= 0
I
E
1000
VCE = -5V
100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
10
-1 -10
IC[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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