Fairchild BC337, BC338 service manual
查询BC33716供应商
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
BC337/338
BC337/338
1
1. Collector 2. Base 3. Emitter
TO-92
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CES
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage 5 V
Collector Current (DC) 800 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE1
h
FE2
V
(sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.7 V
CE
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Collector-Emitter Breakdown Voltage
: BC337
: BC338
Emitter-Base Breakdown Voltage IE=0.1mA, IC=0 5 V
Collector Cut-off Current
: BC337
: BC338
DC Current Gain
(on) Base Emitter On Voltage VCE=1V, IC=300mA 1.2 V
Current Gain Bandwidth Product VCE=5V, IC=10mA, f=50MHz 100 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 12 pF
Ta=25°C unless otherwise noted
: BC337
: BC338
: BC337
: BC338
Ta=25°C unless otherwise noted
IC=10mA, IB=0
IC=0.1mA, VBE=0
=45V, IB=0
V
CE
V
=25V, IB=0
CE
VCE=1V, IC=100mA
=1V, IC=300mA
V
CE
45
25
50
30
100
60
50
30
45
25
V
V
V
V
2
100
2
100
630
V
V
V
V
nA
nA
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
100 ~ 250 160 ~ 400 250 ~ 630
60- 100- 170-
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
BC337/338
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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