Fairchild BC327, BC328 service manual
BC327/328
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338
BC327/328
1
1. Collector 2. Base 3. Emitter
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CES
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -5 V
Collector Current (DC) -800 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
BV
BV
BV
I
CES
h
h
V
V
f
T
C
CEO
CES
EBO
FE1
FE2
CE
BE
ob
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Collector-Emitter Breakdown Voltage
: BC327
: BC328
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current
: BC327
: BC328
DC Current Gain
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
(on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz
Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF
Ta=25°C unless otherwise noted
: BC327
: BC328
: BC327
: BC328
Ta=25°C unless otherwise noted
IC= -10mA, IB=0
IC= -0.1mA, VBE=0
= -45V, VBE=0
V
CE
V
= -25V, VBE=0
CE
VCE= -1V, IC= -100mA
= -1V, IC= -300mA
V
CE
-45
-25
-50
-30
100
40
-50
-30
-45
-25
-2
-2
V
V
V
V
-100
-100nAnA
630
V
V
V
V
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
100 ~ 250 160 ~ 400 250 ~ 630
60- 100- 170-
Typical Characteristics
BC327/328
= - 5.0mA
I
B
= - 4.5mA
B
I
= - 4.0mA
B
I
I
IB = - 1.0mA
IB = - 0.5mA
= - 3.5mA
B
= - 3.0mA
B
I
= - 2.5mA
B
I
I
B
IB = 0
= - 2.0mA
I
B
= - 1.5mA
[mA], COLLECTOR CURRENT
C
I
-500
-400
-300
-200
-100
-0
-1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
P
= 600mW
T
PULSE
VCE = - 2.0V
- 1.0V
= - 50
I
B
A
µ
= - 10
B
P
= 600mW
T
A
µ
A
µ
A
µ
A
µ
A
µ
= - 40
I
B
= - 30
I
B
= - 20
I
B
I
IB = 0
-20
-16
-12
I
B
= - 80
I
B
A
µ
= - 70
µ
= - 60
I
B
A
-8
[mA], COLLECTOR CURRENT
-4
C
I
-10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
IC = 10 I
PULSE
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
VCE = -1V
PULSE
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
VBE[V], BASE-EMITTER VOLTAGE
1000
100
[MHz], GAIN-BANDWIDTH PRODUCT
T
f
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
VCE = -5.0V
Figure 5. Base-Emitter On Voltage Figure 6. Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002
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