Fairchild BC307, BC308, BC309 service manual
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Switching and Amplifier Applications
• Low Noise: BC309
BC307/308/309
BC307/308/309
1
1. Collector 2. Base 3. Emitter
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CES
CEO
EBO
C
C
J
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -5 V
Collector Current (DC) -100 mA
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
: BC307
: BC308/309
: BC307
: BC308/309
-50
-30
-45
-25
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC307/308/309
Electrical Characteristics T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CES
h
V
V
V
f
T
C
C
CEO
CES
EBO
FE
CE
BE
BE
ob
ib
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
IC= -2mA, IB=0
-45
-25
IC= -10µA, VBE=0
-50
-30
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current
: BC307
: BC308/309
V
= -45V , VBE=0
CE
= -25V , VBE=0 -2-2
V
CE
-15
-15
DC Current Gain VCE= -5V, IC= -2mA 120 8 0 0
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
= -100mA, IB= -5mA
I
C
(sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA
I
= -100mA, IB= -5mA
C
-0.5
-0.7
-0.85
-0.3 V
(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -0.55 -0.62 -0.7 V
Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz 130 MHz
Output Capacitance VCB= -10V , IE=0, f=1MHz 6 pF
Input Capacitance VEB= -0.5V, IC=0, f=1MHz 12 pF
NF Noise Figure
: BC307/308
: BC309
: BC309
= -5V, IC= -0.2mA,
V
CE
=2KΩ, f=1KHz
R
G
V
= -5V, IC= -0.2mA
CE
=2KΩ, f=30~15KHz
R
G
10
4
2
4
V
V
V
V
nA
nA
V
V
V
dB
dB
dB
h
Classification
FE
Classification A B C
h
FE
120 ~ 220 180 ~ 460 380 ~ 800
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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