Fairchild BAV23S, BAV23S Schematic [ru]
tm
BAV23S
Small Signal Diode
3
2
1
SOT-23
3
L30
12
September 2006
Connection Diagram
3
2
1
BAV23S Small Signal Diode
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
Maximum Repetitive Reverse Voltage 250 V
Average Rectified Forward Current 200 mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 microsecond
Pulse Width = 100 microsecond
Storage Temperature Range -55 to +150 °C
Operating Junction Temperature 150 °C
9.0
3.0
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Unit
P
D
R
θJA
Electrical Characteristics T
Symbol Parameter Conditions Min. Max Units
V
R
V
F
I
R
t
rr
Power Dissipation 350 mW
Thermal Resistance, Junction to Ambient* 357 °C/W
= 25°C unless otherwise noted
C
Breakdown Voltage IR = 100µA 250 V
Forward Voltage IF = 100mA
IF = 200mA
Reverse Leakage VR = 250V
VR = 250V, TA = 150°C
Reverse Recovery Time IF = IR = 30mA, IRR = 3.0mA,
RL = 100Ω
1.0
1.25
100
100
50 ns
A
A
V
V
nA
µA
©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
BAV23S Rev. E
Typical Performance Characteristics
BAV23S Small Signal Diode
BAV23S Rev. E
2 www.fairchildsemi.com
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