Fairchild BAT54SWT1G, BAT54CWT1G service manual
BAT54SWT1G/BAT54CWT1G
Schottky Diodes
3
Connection Diagram
3
BAT54CWT1GBAT54SWT1G
3
BAT54SWT1G/BAT54CWT1G Schottky Diodes
April 2005
SOT-323
Absolute Maximum Ratings *
12
MARKING
BAT54SWT1G = YB
BAT54CWT1G = YC
Ta = 25°C unless otherwise noted
2
1
1
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Maximum Repetitive Reverse Voltage 30 V
Average Rectified Forward Current 200 mA
Non-repetitive Peak Forward Surge Current
600 mA
Pulse Width = 1.0 second
Storage Temperature Range -65 to +125 °C
Operating Junction Temperature -65 to +125 °C
Thermal Characteristics
Symbol Parameter Value Unit
P
D
R
θJA
FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
Power Dissipation 232 mW
Thermal Resistance, Junction to Ambient 430 °C/W
TC = 25°C unless other wise noted
2
Symbol Parameter Conditions Min. Max. Units
V
R
V
F
I
R
C
T
t
rr
©2005 Fairchild Semiconductor Corporation
BAT54SWT1G/BAT54CWT1G Rev. A
Breakdown Voltage IR = 10µA30V
Forward Voltage IF = 0.1mA
= 1mA
I
F
I
= 10mA
F
= 30mA
I
F
= 100mA
I
F
Reverse Leakage VR = 25V 2 µA
Total Capacitance VR = 1V, f = 1.0MHz 10 pF
Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA,
R
= 100Ω
L
1
240
320
400
500
0.8
mV
mV
mV
mV
V
5.0 ns
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Forward Voltage vs Temperature Figure 2. Reverse Leakage Current
vs Temperature
1E-3
BAT54SWT1G/BAT54CWT1G Schottky Diodes
0.1
0.01
[A]
F
1E-3
1E-4
Forward Current, I
1E-5
1E-6
125 °C
100 °C
75 °C
25 °C
0.2 0.4 0.6 0.8
Forward Voltage Drop, VF[V]
1E-4
[A]
R
1E-5
1E-6
1E-7
Reverse Current, I
1E-8
0102030
125 °C
100 °C
75 °C
25 °C
Reverse Voltage, VR[V]
Figure 3. Capacitance vs Reverse Bias Voltage
20
18
15
[pF]
J
13
10
8
5
3
Juntion Capacitance, C
0
0246810
Reverse Voltage, VR[V]
BAT54SWT1G/BAT54CWT1G Rev. A
2
www.fairchildsemi.com
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