Fairchild BAT54, BAT54, BAT54A, BAT54A, BAT54C Schematic [ru]
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February 2005
BAT54/A/C/S Schottky Diodes
BAT54/A/C/S
Schottky Diodes
Connection Diagram
BAT54 BAT54A
3
3
3
L4P
1
2
1
SOT-23
Absolute Maximum Ratings *
12
MARKING
= L4P
= L43
BAT54A = L42
BAT54S = L44
BAT54
BAT54C
Ta = 25°C unless otherwise noted
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Maximum Repetitive Reverse Voltage 30 V
Average Rectified Forward Current 200 mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range -55 to +150 °C
Operating Junction Temperature -55 to +150 °C
2NC
3
2
1
600 mA
3
1
BAT54SBAT54C
3
1
2
2
Thermal Characteristics
Symbol Parameter Value Unit
P
D
R
θJA
Electrical Characteristics
Symbol Parameter Conditions Min. Max. Units
V
R
V
F
I
R
C
T
t
rr
©2005 Fairchild Semiconductor Corporation
BAT54/A/C/S Rev. E1
Power Dissipation 290 mW
Thermal Resistance, Junction to Ambient 430 °C/W
TC = 25°C unless other wise not ed
Breakdown Voltage IR = 10µA30V
Forward Voltage IF = 0.1mA
I
= 1mA
F
= 10mA
I
F
= 30mA
I
F
I
= 100mA
F
Reverse Leakage VR = 25V 2 µA
Total Capacitance VR = 1V, f = 1.0MHz 10 pF
Reverse Recovery Time IF = IR = 10mA, IRR = 1.0mA,
= 100Ω
R
L
1
240
320
400
500
0.8
mV
mV
mV
mV
V
5.0 ns
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Forward Voltage vs Temperature Figure 2. Reverse Leakage Current
vs Temperature
-1
10
-2
10
-3
10
-4
10
-Forward Current [A]
F
I
-5
10
-6
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-25oC
25oC
75oC
100oC
VF-Forward Voltage [V]
Figure 3. Capacitance vs Reverse Bias Voltage
0
-3
10
10
-1
-4
10
10
-2
-5
10
10
-3
-6
10
10
-4
-7
10
10
-Reverse Leakage Current [A]
R
I
-5
-8
10
10
0 5 10 15 20 25 30
VR-Reverse Voltage [V]
125oC
100oC
75oC
-25oC
BAT54/A/C/S Schottky Diodes
16
14
12
10
8
6
Capacitance [pF]
4
2
012345678910
VR-Reverse Voltage [V]
BAT54/A/C/S Rev. E1
2
www.fairchildsemi.com
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