Fairchild 54F10, 74F10 service manual

查询54F10供应商

54F/74F10
Triple 3-Input NAND Gate

General Description

This device contains three independent gates, each of
which performs the logic NAND function.

54F/74F10 Triple 3-Input NAND Gate

December 1994

Commercial Military

74F10PC N14A 14-Lead (0.300×Wide) Molded Dual-In-Line

54F10DM (Note 2) J14A 14-Lead Ceramic Dual-In-Line

74F10SC (Note 1) M14A 14-Lead (0.150×Wide) Molded Small Outline, JEDEC

74F10SJ (Note 1) M14D 14-Lead (0.300×Wide) Molded Small Outline, EIAJ

54F10FM (Note 2) W14B 14-Lead Cerpack

54F10LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C

Note 1: Devices also available in 13×reel. Use suffixeSCX and SJX.

Note 2: Military grade device with environmental and burn-in processing. Use suffix

Logic Symbol

IEEE/IEC

TL/F/9458– 3

Package

Number

Connection Diagrams

Pin Assignment for

DIP, SOIC and Flatpak

Package Description

e

DMQB, FMQB and LMQB.

TL/F/9458– 2

Pin Assignment

for LCC

TL/F/9458– 1

Unit Loading/Fan Out

54F/74F

Pin Names Description

An,Bn,C

n

O

n

FASTÉand TRI-STATEÉare registered trademarks of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Inputs 1.0/1.0 20 mA/b0.6 mA
Outputs 50/33.3

TL/F/9458

U.L. Input I

HIGH/LOW Output IOH/I

b

1 mA/20 mA

IH/IIL

OL

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature

Ambient Temperature under Bias

Junction Temperature under Bias

Plastic

Pin Potential to

V

CC

Ground Pin

Input Voltage (Note 2)

Input Current (Note 2)

Voltage Applied to Output

in HIGH State (with V
Standard Output

CC

e

TRI-STATEÉOutput

0V)

b

65§Ctoa150§C

b

55§Ctoa125§C

b

55§Ctoa175§C

b

55§Ctoa150§C

b

0.5V toa7.0V

b

0.5V toa7.0V

b

30 mA toa5.0 mA

b

0.5V to V

b

0.5V toa5.5V

Current Applied to Output

in LOW State (Max) twice the rated I

Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under
these conditions is not implied.

Note 2: Either voltage limit or current limit is sufficient to protect inputs.

(mA)

OL

DC Electrical Characteristics

Symbol Parameter

V

V

V

V

V

I

IH

I

BVI

I

CEX

V

I

OD

I

IL

I

OS

I

CCH

I

CCL

IH

IL

CD

OH

OL

ID

Input HIGH Voltage 2.0 V Recognized as a HIGH Signal

Input LOW Voltage 0.8 V Recognized as a LOW Signal

Input Clamp Diode Voltage

Output HIGH 54F 10% V
Voltage 74F 10% V

Output LOW 54F 10% V
Voltage 74F 10% V

Input HIGH 54F 20.0
Current 74F 5.0

Input HIGH Current 54F 100
Breakdown Test 74F 7.0

Output HIGH 54F 250
Leakage Current 74F 50

Input Leakage
Test All other pins grounded

Output Leakage
Circuit Current All other pins grounded

Input LOW Current

Output Short-Circuit Current

Power Supply Current 1.4 2.1 mA Max V

Power Supply Current 5.1 7.7 mA Max V

74F 5% V

74F 4.75 V 0.0

74F 3.75 mA 0.0

Min Typ Max

2.5 I

CC

2.5 V Min I

CC

2.7 I

CC

CC

CC

b

60

CC

54F/74F

Recommended Operating
Conditions

Free Air Ambient Temperature

Military
Commercial 0

Supply Voltage

Military
Commercial

Units V

b

1.2 V Min I

0.5

0.5 I

CC

V Min

mA Max V

mA Max V

mA Max V

b

0.6 mA Max V

b

150 mA Max V

I

I

V

IN

OH

OH

OH

OL

OL

ID

IN

IN

OUT

IOD

IN

OUT

O

O

eb

eb

eb

eb

e

e

e

e

e

e

1.9 mA

e

e

e

e

e

20 mA
20 mA

HIGH

LOW

Conditions

18 mA

1mA
1mA
1mA

2.7V

7.0V

V

150 mV

0.5V

0V

b

55§Ctoa125§C

Ctoa70§C

§

a

4.5V toa5.5V

a

4.5V toa5.5V

CC

2

AC Electrical Characteristics

74F 54F 74F

ea

T

25§C

Symbol Parameter V

CC

C

A

L

ea

e

50 pF

5.0V

e

T

A,VCC

e

C

50 pF C

L

Mil TA,V

e

Com

CC

e

50 pF

L

Units

Min Typ Max Min Max Min Max

t
t

PLH

PHL

Propagation Delay 2.4 3.7 5.0 2.0 7.0 2.4 6.0
An,Bn,Cnto O

n

1.5 3.2 4.3 1.5 6.5 1.5 5.3

ns

Ordering Information

The device number is used to form part of a simplified purchasing code where the package type and temperature range are
defined as follows:

74F 10 S C X

Temperature Range Family Special Variations

e

74F

Commercial QBeMilitary grade device with

e

54F

Military environmental and burn-in

Device Type

Package Code

e

Plastic DIP

P

e

Ceramic DIP

D

e

Flatpak

F

e

L

Leadless Chip Carrier (LCC)

e

S

Small Outline Package SOIC JEDEC

e

SJ

Small Outline Package SOIC EIAJ

Temperature Range

processing

e

Devices shipped in 13×reels

X

e

Commercial (0§Ctoa70§C)

C

e

Military (b55§Ctoa125§C)

M

Physical Dimensions inches (millimeters)

20-Lead Ceramic Leadless Chip Carrier (L)

NS Package Number E20A

3

Physical Dimensions inches (millimeters) (Continued)

14-Lead Ceramic Dual-In-Line Package (D)

NS Package Number J14A

14-Lead (0.150×Wide) Molded Small Outline Package, JEDEC (S)

NS Package Number M14A

4

Physical Dimensions inches (millimeters) (Continued)

14-Lead (0.300×Wide) Molded Small Outline Package, EIAJ (SJ)

14-Lead (0.300×Wide) Molded Dual-In-Line Package (P)

NS Package Number M14D

NS Package Number N14A

5

Physical Dimensions inches (millimeters) (Continued)

54F/74F10 Triple 3-Input NAND Gate

14-Lead Ceramic Flatpak (F)

NS Package Number W14B

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor
Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd.

2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16
P.O. Box 58090 D-82256 F4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive
Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park
Tel: [phone] Tel: [phone], Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne
TWX: [phone] Telex: 527649 Chiba-City, Tel: [phone] Tel: [phone] Victoria 3168 Australia

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

Fax: [phone] Ciba Prefecture 261 Fax: [phone] Telex: 391-1131931 NSBR BR Tel: [phone]

Tel: [phone] Fax: [phone] Fax: [phone]
Fax: [phone]