Fairchild 2SA1943, FJL4215 datasheet

2SA1943/FJL4215 PNP Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
Features
• High Current Capability: IC = -17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SC5200/FJL4315.
• Full thermal and electrical Spice models are available.
• Same transistor is also available in:
-- TO3P package, 2SA1962/FJA4213 : 130 watts
-- TO220 package, FJP1943 : 80 watts
-- TO220F package, FJPF1943 : 50 watts
CEO
= -250V
January 2009
1
1.Base 2.Collector 3.Emitter
TO-264
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Ratings Units
BV
CBO
BV
CEO
BV
EBO
I
C
I
B
P
D
TJ, T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
Collector-Base Voltage -250 V Collector-Emitter Voltage -250 V Emitter-Base Voltage -5 V Collector Current -17 A Base Current -1.5 A Total Device Dissipation(TC=25°C)
Derate above 25°C Junction and Storage Temperature - 50 ~ +150 °C
=25°C unless otherwise noted
a
150
1.04
Symbol Parameter Max. Units
R
θJC
* Device mounted on minimum pad size
Thermal Resistance, Junction to Case 0.83 °C/W
hFE Classification
W
W/°C
Classification R O
h
FE1
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 1
55 ~ 110 80 ~ 160
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
Electrical Characteristics* T
=25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
VCE(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V VBE(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V f
T
C
ob
* Pulse Test: Pulse Width=20µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=-5mA, IE=0 -250 V Collector-Emitter Breakdown Voltage IC=-10mA, RBE= -250 V Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA DC Current Gain VCE=-5V, IC=-1A 55 160 DC Current Gain VCE=-5V, IC=-7A 35 60
Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz Output Capacitance VCB=-10V, f=1MHz 360 pF
Ordering Information
Part Number Marking Package Packing Method Remarks
2SA1943RTU A1943R TO-264 TUBE hFE1 R grade 2SA1943OTU A1943O TO-264 TUBE hFE1 O grade
FJL4215RTU J4215R TO-264 TUBE hFE1 R grade
FJL4215OTU J4215O TO-264 TUBE hFE1 O grade
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 2
Typical Characteristics
2SA1943/FJL4215 — PNP Epitaxial Silicon Transistor
-20
-18
-16
-14
-12
-10
-8
-6
[mA], COLLECTOR CURRENT
-4
C
I
-2
-0 -2 -4 -6 -8 -10
IB = -1A
VCE[V], COL L ECTOR-E MITTER V O L TAGE
Figure 1. Static Characteristic Figure 2. DC current Gain ( R Grade )
o
Tj = 125
C
o
Tj = 25
C
100
o
Tj = -25
C
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC[A], COLLECTOR CURRENT
0
0
6
-
=
I
B
0
0
5
-
=
I
B
0
4
-
=
I
B
IB = -300mA
IB = -200mA
IB = -100mA
IB = -900mA
IB = -800mA
IB = -700mA
A
m
A
m
A
m
0
VCE = -5V
o
Tj = 125
C
o
C
Tj = 25
100
o
C
Tj = -25
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
VCE = -5V
IC[A], COLLECTOR CURRENT
10000
1000
100
Vce(sat)[mV], SATURATION VOLTAGE
Tj=125
10
0.1 1 10
o
Tj=25
C
o
C
o
C
Tj=-25
Ic=-1 0 Ib
Ic[A], COL L ECT OR CUR RENT
Figure 3. DC current Gain ( O Grade ) Figure 4. Collector-Emitter Saturation Voltage
10000
o
C
Tj=-25
1000
100
Vbe(sat)[mV], SATURATION VOLTAGE
0.1 1 10
Tj=25
o
C
Tj=125
Ic[A], COL L ECT OR CUR RENT
14
Ic=-1 0 Ib
o
C
12
10
8
6
4
[A], COLLECTOR CURRENT
C
2
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VBE[V], BASE-EMITTER VOLTAGE
VCE = 5V
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter On Voltage
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1943/FJL4215 Rev. C 3
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