Fairchild 2N7051 service manual
查询2N7051供应商
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
• Sourced from Process 06.
• See 2N7052 for Characteristics.
2N7051
2N7051
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings*
Symbol Parameter Ratings Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 100 V
Collector-Base Voltage 100 V
Emitter-Base Voltage 12 V
Collector Current 1.5 A
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter T est Condition Min. Typ. Max. Units
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CES
I
EBO
On Characteristics *
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1.5 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 100mA, V
V
BE
Small Signal Characteristics
f
T
h
fe
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 100 V
Collector-Base Breakdown Voltage IC = 100µA, IB = 0 100 V
Emitter-Base Breakdown Voltage IE = 1.0mA, IC = 0 12 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Transition Frequency IC = 100mA, V
Small Signal Current Gain V
TA=25°C unless otherwise noted
TA=25°C unless otherwise noted
= 80V, IE = 0 0.1 µA
CB
V
= 80V, IE = 0 0.2 µA
CE
= 7.0V, IC = 0 0.1 µA
EB
= 5.0V, IC = 100mA
CE
V
= 5.0V, IC = 1.0A
CE
BE
CE
=5.0V, IC = 100mA,
CE
f = 20MHz
10,000
1,000 20,000
=5.0V 2.0 V
=5.0V 200 MHz
10 100
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
2N7051
Thermal Characteristics T
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 °C/W
=25°C unless otherwise noted
A
625
5.0
mW
mW/°C
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
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