Fairchild 2N7002W service manual
February 2010
S
D
G
SOT-323
Marking : 2N
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
DSS
V
DGR
V
GSS
I
D
T
J , TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Drain-Source Voltage 60 V
Drain-Gate Voltage RGS 1.0M 60 V
Gate-Source Voltage Continuous
Pulsed
Drain Current Continuous
Continuous @ 100°C
Pulsed
Junction and Storage Temperature Range -55 to +150 C
±20
±40
115
73
800
V
mA
Thermal Characteristics
Symbol Parameter Value Units
P
R
JA
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
Total Device Dissipation
D
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient * 625 C/W
200
1.6
mW
mW/C
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002W Rev. A1 1
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics (Note1)
BV
I
DSS
I
GSS
DSS
Drain-Source Breakdown Voltage VGS=0V, ID=10uA 60 78 - V
Zero Gate Voltage Drain Current VDS=60V, VGS=0V
VDS=60V, VGS=0V, @TC=125C
-0.00171.0
500
Gate-Body Leakage VGS=±20V, VDS=0V - 0.2 ±10 nA
On Characteristics (Note1)
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
Gate Threshold Voltage VDS=VGS, ID=250A 1.0 1.76 2.0 V
Static Drain-Source
On-Resistance
VGS=5V, ID=0.05A,
VGS=10V, ID=0.5A, @TJ=125°C
-
-
1.6
2.53
7.5
13.5
On-State Drain Current VGS=10V, VDS=7.5V 0.5 1.43 - A
Forward Transconductance VDS=10V, ID=0.2A 80 356.5 - mS
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance - 12.4 25 pF
=25V, VGS=0V, f=1.0MHz
V
DS
Reverse Transfer Capacitance - 6.5 7.0 pF
-37.850pF
Switching Characteristics
t
D(ON)
t
D(OFF)
Turn-On Delay Time
Turn-Off Delay Time - 12.5 20
=30V, ID=0.2A, V
V
DD
RL=150, R
GEN
=25
Note1 : Short duration test pulse used to minimize self-heating effect.
GEN
=10V
-5.8520
A
ns
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002W Rev. A1 2
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