Fairchild 2N7002W service manual

February 2010

S

D

G

SOT-323

Marking : 2N

2N7002W

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

A

Symbol Parameter Value Units

V

DSS

V

DGR

V

GSS

I

D

T

J , TSTG

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Drain-Source Voltage 60 V
Drain-Gate Voltage RGS  1.0M 60 V
Gate-Source Voltage Continuous

Pulsed

Drain Current Continuous

Continuous @ 100°C
Pulsed

Junction and Storage Temperature Range -55 to +150 C

±20
±40

115

73

800

V

mA

Thermal Characteristics

Symbol Parameter Value Units

P

R

JA

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

Total Device Dissipation

D

Derating above TA = 25°C
Thermal Resistance, Junction to Ambient * 625 C/W

200

1.6

mW

mW/C

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002W Rev. A1 1

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Condition Min. Typ. Max. Units

Off Characteristics (Note1)

BV

I

DSS

I

GSS

DSS

Drain-Source Breakdown Voltage VGS=0V, ID=10uA 60 78 - V
Zero Gate Voltage Drain Current VDS=60V, VGS=0V

VDS=60V, VGS=0V, @TC=125C

-0.00171.0
500

Gate-Body Leakage VGS=±20V, VDS=0V - 0.2 ±10 nA

On Characteristics (Note1)

V

GS(th)

R

DS(ON)

I

D(ON)

g

FS

Gate Threshold Voltage VDS=VGS, ID=250A 1.0 1.76 2.0 V
Static Drain-Source

On-Resistance

VGS=5V, ID=0.05A,
VGS=10V, ID=0.5A, @TJ=125°C

-

-

1.6

2.53

7.5

13.5
On-State Drain Current VGS=10V, VDS=7.5V 0.5 1.43 - A
Forward Transconductance VDS=10V, ID=0.2A 80 356.5 - mS

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance - 12.4 25 pF

=25V, VGS=0V, f=1.0MHz

V

DS

Reverse Transfer Capacitance - 6.5 7.0 pF

-37.850pF

Switching Characteristics

t

D(ON)

t

D(OFF)

Turn-On Delay Time
Turn-Off Delay Time - 12.5 20

=30V, ID=0.2A, V

V

DD

RL=150, R

GEN

=25

Note1 : Short duration test pulse used to minimize self-heating effect.

GEN

=10V

-5.8520

A



ns

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002W Rev. A1 2

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

1.6

1.4

1.2

1.0

0.8

0.6

0.4

. DRAIN-SOURCE CURRENT(A)

D

I

0.2

0.0
012345678910

VGS = 10V

5V

4V

3V

VDS. DRAIN-SOURCE VOLTAGE (V)

2V

3.0

2.5

VGS = 3V

4V

4.5V

(Ω)

(on),

2.0

DS

R

1.5

DRANI-SOURCE ON-RESISTANCE

1.0

0.0 0.2 0. 4 0.6 0.8 1.0

7V

ID. DRAIN-SOURCE CURRENT(A)

5V

6V

9V

8V

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

10V

Figure 3. On-Resistance Variation with
Temperature

3.0

Figure 4. On-Resistance Variation with
Gate-Source Voltage

3.0

VGS = 10V
I

2.5

2.0

(Ω)

(on)

DS

1.5

R

1.0

DRANI-SOURCE ON-RESISTANCE

0.5

-50 0 50 100 150

= 500 mA

D

TJ. JUNCTION TEMPERATURE(oC)

2.5

(Ω)

2.0

(on),

DS

R

DRANI-SOURCE ON-RESISTANCE

ID = 50 mA

1.5

1.0
246810

ID = 500 mA

VGS. GATE-SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

1.0

0.8

0.6

0.4

VDS = 10V

TJ = -25oC

25oC

150oC

125oC

75oC

2.5

2.0

ID = 1 mA

ID = 0.25 mA

1.5

VGS = V

DS

0.2

. DRAIN-SOURCE CURRENT(A)

D

I

0.0
23456

VGS. GATE-SOURCE VOLTAGE (V)

Vth, Gate-Source Threshold Voltage (V)

1.0

-50 0 50 100 150

TJ. JUNCTION TEMPERATURE(oC)

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N7002W Rev. A1 3

Typical Performance Characteristics

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature

VGS = 0 V

100

10

Reverse Drain Current, [mA]

S

I

1

0.0 0.2 0.4 0.6 0.8 1.0

VSD, Body Diode Forward Voltage [V]

150oC

25oC

-55oC

Figure 8. Power Derating

280

240

200

160

120

80

40

[mW], POWER DISSIPATION

C

P

0

0 25 50 75 100 125 150 175

Ta[oC], AMBIENT TEMPERATURE

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N7002W Rev. A1 4

Package Dimensions

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

SOT323

© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com

2N7002W Rev. A1 5

© Fairchild Semiconductor Corporation www.fairchildsemi.com

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Rev. I47