Fairchild 2N7002MTF service manual
N-Channel Small Signal MOSFET
2N7002MTF
FEATURES
! Lower R
! Improved Inductive Ruggedness
! Fast Switching Times
! Lower Input Capacitance
! Extended Safe Operating Area
! Improved High Temperature Reliability
DS(on)
Product Summary
Part Number BV
DSS
2N7002 60V 5.0Ω 115mA
RDS(on) I
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
V
DSS
I
D
I
DM
V
GS
P
D
T
, T
J
STG
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
D
=25℃)
C
=100℃)
C
=25℃)
C
①
BV
DSS
R
DS(on)
ID= 200 mA
SOT-23
1.Gate 2. Source 3. Drain
60
115
73
800
±20
0.2
1.6
- 55 to +150
= 60 V
= 5.0 Ω
V
mA
mA
V
W
mW/℃
℃
Thermal Resistance
R
θJA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Ambient
625--
℃/W
Rev. C1
2N7002MTF
N-Channel
Small Signal MOSFET
Electrical Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
BV
V
I
I
I
R
C
t
t
DSS
GS(th)
GSS
DSS
D(ON)
DS(on)
g
fs
C
iss
oss
C
rss
d(on)
t
r
d(off)
t
f
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Revers e
Drain-to-Source Leakage Current
On-State Drain-Source Current
Static Drain-Source
On-State Resistance ②
Forward Transconductance ②
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(TC=25℃ unless otherwise specified)
60
1.2
-
-
-
-
0.5
-
0.08
-
-
-
-
-
-
-
-
-
-
-
2.5
100
V
V
nA
-
-100
-
1.0
-
500
-
-
5.0
-
-
-
-
-
-
-
-
50
25
20
20
µA
A
-
Ω
-
S
pF
5
ns
-
VGS= 0V, ID= 250µA
= VGS, ID= 250µA
V
DS
= 20V
V
GS
= -20V
V
GS
= 40V
V
GS
VGS= 40V, TC= 125℃
VDS= 10V, VGS= 10V
= 10V, ID= 0.5A
V
GS
V
= 15V, ID= 0.2A
DS
VDS= 25V, VGS= 0V,
f = 1.0MHz
V
= 30V, ID= 0.2A
DD
RG= 25Ω
②③
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
S
I
SD
V
SD
Notes ;
① Repetitive Rating : Pulse Width Limited by Maxim um Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operati ng T emperature
Continuous Source Current
Pulse Source Current ①
Diode Forward Voltage ②
-
-
115
-
-
800
-
-
1.5
mA
Integral reverse pn-diode
In the MOSFET
mA
T
= 25 ℃, IS= 115mA
V
A
VGS= 0V
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