Fairchild 2N7002KW service manual
May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
S
SOT-323
G
Marking : 7KW
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
DSS
V
GSS
I
D
T
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Drain-Source Voltage 60 V
Gate-Source Voltage ±20 V
Maximum Drain Current - Continuous
T
- Pulsed
Operating Junction Temperature Range -55 to +150 °C
J
Storage Temperature Range -55 to +150 °C
= 100°C
J
310
195
1.2
mA
mA
A
Thermal Characteristics
Symbol Parameter Value Units
P
R
θJA
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Total Device Dissipation
D
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient * 410 °C/W
300
2.4
mW
mW/°C
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 1
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV
I
DSS
I
GSS
Drain-Source Breakdown Voltage V
DSS
Zero Gate Voltage Drain Current V
Gate-Body Leakage V
= 0V, ID =10μA60 V
GS
DS
V
DS
GS
= 60V, V
= 60V, V
= ±20V, V
= 0V
GS
= 0V, TJ = 125°C
GS
= 0V ±10 μA
DS
1.0
0.5
μA
mA
On Characteristics (Note1)
V
GS(th)
R
DS(ON)
V
DS(ON)
I
D(ON)
g
Gate Threshold Voltage VDS = VGS, ID = 250μA1.12.1V
Static Drain-Source
On-Resistance
VGS = 10V, ID = 500mA
VGS = 10V , ID = 500mA, TJ = 100°C
VGS = 5V, ID = 50mA
= 5V, ID = 50mA, TJ = 100°C
V
GS
Drain-Source On-Voltage VGS = 10V, ID = 500mA
VGS = 5V, ID = 50mA
On-State Drain Current VGS = 10V, V
Forward Transconductance VDS = 2V, ID = 0.2A 80 mS
FS
= 2V 500 mA
DS
1.6
2.4
2
3
3.75
1.5
Ω
Ω
Ω
Ω
V
V
Dynamic Characteristics
C
C
C
Input Capacitance
iss
Output Capacitance 25 pF
oss
Reverse Transfer Capacitance 5 pF
rss
VDS = 25V, VGS= 0V, f = 1.0MHz
50 pF
Switching Characteristics
t
D(ON)
t
D(OFF)
Turn-On Delay Time
Turn-Off Delay Time 60
= 30V, RL = 150Ω, VGS= 10V,
V
DD
= 200mA, R
I
D
GEN
= 25Ω
20
ns
ns
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current 115 mA
S
I
V
Maximum Pulsed Drain-Source Diode Forward Current 0.8
SM
Drain-Source Diode Forward
SD
VGS = 0V, IS = 115mA 1.1
Voltage
A
V
Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2. 0% .
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 2
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