Fairchild 2N7002K service manual
January 2012
2N7002K
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101
D
2N7002K — N-Channel Enhancement Mode Field Effect Transistor
S
G
SOT-23
Marking : 7K
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
V
DSS
V
DGR
V
GSS
I
D
T
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Drain-Source Voltage 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V
Gate-Source Voltage ±20 V
Drain Current Continuous
Pulsed
Operating Junction Temperature Range -55 to +150 °C
J
300
800
Storage Temperature Range -55 to +150 °C
mA
Thermal Characteristics
Symbol Parameter Value Units
P
R
θJA
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Total Device Dissipation
D
Derating above TA = 25°C
350
2.8
Thermal Resistance, Junction to Ambient * 350 °C/W
mW
mW/°C
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002K Rev. A3 1
2N7002K — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Condition MIN MAX Units
Off Characteristics
BV
I
DSS
I
GSS
DSS
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current V
Gate-Body Leakage V
(Note1)
= 0V, ID = 10uA 60 V
GS
DS
V
DS
GS
= 60V, V
= 60V, V
= ±20V, V
= 0V
GS
= 0V, @TC=125°C
GS
= 0V ±10 μA
DS
1.0
500
On Characteristics (Note1)
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250uA 1.0 2.5 V
Satic Drain-Source On-Resistance VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 200mA
On-State Drain Current VGS = 10V, V
= 7.5V 1.5 A
DS
2
4
Forward Transconductance VDS = 10V, ID = 0.2A 200 mS
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 15 pF
= 25V, VGS= 0V, f = 1.0MHz
V
DS
Reverse Transfer Capacitance 6 pF
50 pF
Switching Characteristics
t
D(ON)
t
D(OFF)
Note1 : Short duration test pulse used to minimize self-heating effect.
Turn-On Delay Time
Turn-Off Delay Time 30
VDD = 30V, I
= 200mA,
DSS
RG = 10Ω, VGS= 10V
5
μA
Ω
ns
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002K Rev. A3 2
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