Fairchild 2N7002DW service manual
October 2007
2N7002DW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
SC70-6 (SOT363)
2N7002DW — N-Channel Enhancement Mode Field Effect Transistor
1
Marking : 2N
Absolute Maximum Ratings * T
1
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
DSS
V
DGR
V
GSS
I
Drain Current Continuous
D
T
J , TSTG
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Drain-Source Voltage 60 V
Drain-Gate Voltage R
Gate-Source Voltage Continuous
Pulsed
Continuous @ 100°C
Pulsed
Junction and Storage Temperature Range -55 to +150 °C
≤ 1.0MΩ 60 V
GS
±20
±40
115
73
800
Thermal Characteristics
Symbol Parameter Value Units
P
D
R
θJA
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size,
Total Device Dissipation
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient * 625 °C/W
200
1.6
V
mA
mW
mW/°C
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002DW Rev. A 1
2N7002DW — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Condition MIN TYP MAX Units
Off Characteristics (Note1)
BV
I
DSS
I
GSS
DSS
Drain-Source Breakdown Voltage VGS= 0V, ID=10uA 60 78 - V
Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V
VDS= 60V, VGS= 0V, @TC = 125°C
- 0.001
7
1.0
500
Gate-Body Leakage VGS= ±20V, VDS= 0V - 0.2 ±10 nA
On Characteristics (Note1)
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
Gate Threshold Voltage V
Satic Drain-Source On-Resistance V
On-State Drain Current V
Forward Transconductance V
= V
, I
DS
= 5V, ID = 0.05A,
GS
V
= 10V, ID = 0.5A, @Tj = 125°C
GS
= 10V, V
GS
= 10V, ID = 0.2A 80 356.5 - mS
DS
= 250uA 1.0 1.76 2.0 V
GS
D
-
-
= 7.5V 0.5 1.43 - A
DS
1.6
2.53
13.5
7.5
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
Output Capacitance - 12.4 25 pF
= 25V, V
DS
= 0V, f = 1.0MHz
GS
- 37.8 50 pF
Reverse Transfer Capacitance - 6.5 7.0 pF
Switching Characteristics
t
D(ON)
t
D(OFF)
Note1 : Short duration test pulse used to minimize self-heating effect.
Turn-On Delay Time V
Turn-Off Delay Time - 12.5 20
= 30V, ID = 0.2A, V
DD
R
= 150Ω, R
L
GEN
= 25Ω
GEN
= 10V
- 5.85 20
uA
Ω
ns
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002DW Rev. A 2
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