Fairchild 2N6897 service manual
2N6897
-12A, -100V, P-Channel Enhancement Mode
December 2001
Power MOS Field Effect Transistor
Features
• -12A, -100V
•r
DS(ON)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
= 0.3 Ω
Ordering Information
PART NUMBER PACKAGE BRAND
2N6897 TO-204AA 2N6897
NOTE: When ordering, include the entire part number.
Packaging
Description
The 2N6897 is an P-Channel enhancement mode silicon
gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate
drive power. This device can be operated directly from an
integrated circuit.
Symbol
D
G
S
JEDEC TO-204AA
©2001 Fairchild Semiconductor Corporation 2N6897 Rev. B
µ
µ
Ω
Ω
2N6897
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
C
2N6897 UNITS
Drian to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Drian to Gate Voltage (R
Continuous Drain Current
= 1 ΜΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
T
= 25
C
Above T
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
= 25
C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W/
C
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(At distance 1/8 in. (3.17mm) from seating plane for 10s max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
o
T
= 25
C, Unless Otherwise Specified
C
DSS
DGR
D
DM
GS
D
, T
J
STG
L
-100 V
-100 V
-12 A
-30 A
±20 V
100 W
-55 to 150
260
o
C
o
C
o
C
TEST
PARAMETER SYMBOL
Drian to Source
BV
Breakdown Voltage
Gate to Threshold Voltage V
GS(TH)
Zero-Gate Voltage Drain Current I
Zero-Gate Voltage Drain Current
T
= 125
C
o
C
Gate to Source Leakage Current I
Drian to Source On-Voltage (Note 1) V
Static Drian to Source On Resistance (Note 1) r
Static Drian to Source On Resistance
T
= 125
C
o
C (Note 1)
DS(ON)
DS(ON)
Forward Transconductance (Note 1) g
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Thermal Resistance
R
Junction-to-Case
DSS
DSS
GSS
fs
ISS
OSS
RSS
r
f
JC
θ
CONDITIONS MIN TYP MAX UNITS
I
= 1mA, V
D
V
= V
GS
V
= -80V - - 1
DS
V
= -80V - - 50
DS
V
= ±20V, V
GS
I
= 7.6A, V
D
I
=12A, V
D
I
= 7.6A, V
D
I
= 7.6A, V
D
I
= 7.6A, V
D
V
= 0V, V
GS
f = 0.1MHz
= 0V -100 - - V
GS
, I
= 0.25mA -2 - -4 V
DS
D
= 0V - - 100 nA
DS
= -10V - - 2.28 V
GS
= -10V - - -4.8 V
GS
= -10V - - 0.3
GS
= 10V - - 0.465
GS
= -10V 2 - 8 S
DS
DS
= -25V
400 - 1500 pF
200 - 700 pF
60 - 240 pF
I
= 7.6A, V
D
R
GEN
V
GS
= -10V
= R
DS
GS
= -50V
= 15 Ω ,
- - 60 ns
- - 175 ns
- - 275 ns
- - 175 ns
- - 1.25
o
A
A
C/W
Source to Drain Diode Specifications
TEST
PARAMETER SYMBOL
Diode Forward Voltage (Note 1) V
Diode Reverse Recovery Time t
SD
rr
NOTE:
4. Pulsed: pulse duration = 300 µ s, max, duty cycle = 2%.
©2001 Fairchild Semiconductor Corporation 2N6897 Rev. B
CONDITIONS MIN TYP MAX UNITS
I
= 12A 0.8 - 1.6 V
SD
I
= 4A, d
F
/dt = 100A/ µ s - - 500 ns
IF
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