Fairchild 2N6517 service manual
2N6517
NPN Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• Collector Dissipation: P
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
(max) = 625mW
C
August 2010
1
1. Emitter 2. Base 3. Collector
TO-92
2N6517 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
Electrical Characteristics T
Collector-Base Voltage 2N6517
2N6517C
Collector-Emitter Voltage 2N6517
2N6517C
350
400
350
400
Emitter-Base Voltage 6 V
Collector Current 500 mA
Collector Power Dissipation 625 mW
C
Junction Temperature 150 °C
J
Storage Temperature -55 ~ 150 °C
= 25°C unless otherwise noted
a
V
V
V
V
Symbol Parameter Conditions Min. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
CBO
CEO
EBO
FE
Collector-Base Breakdown Voltage
2N6517
2N6517C
= 100µA, IE = 0
I
C
= 100µA, IE = 0
I
C
350
400
Collector-Emitter Breakdown Voltage *
2N6517
2N6517C
= 1mA, IB = 0
I
C
= 1mA, IB = 0
I
C
350
400
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V
Collector Cut-off Current VCB = 250V, IE = 0 50 nA
Emitter Cut-off Current VEB = 5V, IC = 0 50 nA
DC Current Gain *
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517C
= 10V, IC = 1mA
V
CE
= 10V, IC = 10mA
V
CE
V
= 10V, IC = 30mA
CE
= 10V, IC = 50mA
V
CE
= 10V, IC = 100mA
V
CE
= 10V, IC = 5mA
V
CE
20
30
30
20
15
50
200
200
200
V
V
V
V
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 1
2N6517 — NPN Epitaxial Silicon Transistor
Electrical Characteristics (Continued) T
= 25°C unless otherwise noted
a
Symbol Parameter Conditions Min. Max. Units
V
CE(sat)
V
BE(sat)
C
V
BE(on)
ob
f
T
Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
Output Capatitance VCB = 20V, IE = 0, f = 1MHz 6 pF
Current Gain Bandwidth Product * IC = 10mA, VCE = 20V, f = 20MHz 40 200 MHz
Base-Emitter On Voltage IC = 100mA, VCE = 10V 2 V
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
= 20mA, IB = 2mA
I
C
= 30mA, IB = 3mA
I
C
= 50mA, IB = 5mA
I
C
= 20mA, IB = 2mA
I
C
= 30mA, IB = 3mA
I
C
0.3
0.35
0.5
1
0.75
0.85
0.9
V
V
V
V
V
V
V
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6517 Rev. B1 2
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