2N6427 MMBT6427
C
B
E
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
TO-92
C
SOT-23
Mark: 1V
2N6427 / MMBT6427
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
Collector-Emit t er Vol t age 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 12 V
Collector Current - Continuous 1.2 A
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N6427 *MMBT6427
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Dev ice Dissipation
Derate above 25°C
Ther mal Resistance, Junct ion to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
C/W
°
C/W
°
1997 Fairchild Semiconductor Corporation
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitt er Breakdown Voltage* IC = 10 mA, IB = 040V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 10 µA, IC = 0
E
Collector Cu t off Current VCE = 25 V, IB = 0 1.0
40 V
12 V
A
Collector Cu t off Current VCB = 30 V, IE = 0 50 nA
Emitter Cutoff Current VEB = 10 V, IC = 0 50 nA
DC Current Gain* IC = 10 mA, VCE = 5.0 V
I
= 100 mA, VCE = 5.0 V
C
I
= 500 mA, VCE = 5.0 V
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 0.5 mA
)
Base-Emitter Saturation Voltage IC = 500 mA, IB = 0.5 mA 2.0 V
)
C
I
= 500 mA, IB = 0.5 mA
C
10,000
20,000
14,000
100,000
200,000
140,000
1.2
1.5
V
V
Base-Emitter On Voltage IC = 50 mA, VCE = 5.0 mA 1.75 V
2N6427 / MMBT6427
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
Output Capacitance VCB = 10 V, IE = 0,
Input Capcitance VBE = 1.0 V, IC = 0,
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 1.0 MHz
f = 1.0 MHz
7.0 pF
15 pF
3
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2000
SPEC:
N/F: F (F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL co d e
Reel A 2,000 D26Z
Ammo M 2,000 D74Z
Unit w eight = 0.22 gm
Reel weight with compo nents = 1 .0 4 kg
Amm o weig ht with components = 1.02 kg
Max q uantity p er interme d iate box = 10,000 units
E2,000 D27Z
P2,000 D75Z
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
L34Z
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
NO LEADCLIP
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized
Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
2.0 K / BOX
TAPE and REEL OPTION
See Fig 2.0 for various
Reeling Styles
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR
Label
BULK OPTION
See Bulk Packing
Information table
FSCINT Label
2000 units per
EO70 box for
std option
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
114mm x 102mm x 51mm
FSCINT
Label
Customized
Label
FSCINT
Label
Customized
Label
Immediate Box
530mm x 130mm x 83mm
FSCINT Label
©2001 Fairchild Semiconductor Corporation
Intermediate box
ustomized
C
Label
10,000 units maximum
per intermediate box
for std option
5 EO70 boxes per
intermediate Box
March 2001, Rev. B1