Fairchild 2N5830 service manual
2N5830
2N5830
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for general purpose high
voltage amplifiers and gas discharge display driving. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 100 V
Collector-Base Voltage 120 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N5830
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 120 V
Em i t ter - Bas e B reakdown Volt ag e
= 10 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCB = 100 V, IE = 0
= 100 V, IE = 0, TA = 100 °C
V
CB
Emitter Cu toff Curre n t VEB = 4.0 V, IC = 0 50 nA
DC Cu r re n t Ga in VCE = 5.0 V, IC = 1.0 mA
V
= 5.0 V, IC = 10 mA
CE
= 5.0 V, IC = 50 mA
V
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
)
Base-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA
)
CE
= 10 mA, IB = 1.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
= 10 mA, IB = 1.0 mA
I
C
60
80
80
IC = 50 mA, IB = 5.0 mA
Base- Emi tt er O n V oltage VCE = 5.0 V, IC = 1.0 mA 0.8 V
50
25
500
0.15
0.2
0.25
0.8
1.0
1.0
nA
µ
A
V
V
V
V
V
V
2N5830
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
h
ie
h
oe
h
fe
Output Capacitance VCB = 10 V, f = 1.0 MHz 4.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
Inpu t Im peda nce IC = 1.0 mA, VCE = 10 V, 6.0
Output Admittance f = 1.0 kHz 40 µmho
Small-Signal Current Gain 60
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
1.0 5.0
KΩ
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
NSID:
PN2222N
D/C1:
SPEC REV:
D9842
QA REV:
HTB:B
QTY:
10000
SPEC:
B2
(FSCINT)
TO-92 TNR/AMMO PACKING INFROMATION
Packing Style Quantity EOL code
Reel A 2,000 D26Z
Ammo M 2,000 D74Z
Unit w eight = 0.22 gm
Reel weight with co mpone nts = 1.04 kg
Amm o weight with components = 1.02 kg
Max q uantity p er intermed i a te box = 10,000 units
(TO-92) BULK PACKING INFORMATION
NO EOL
E2,000 D27Z
P2,000 D75Z
EOL
CODE
J18Z
J05Z
CODE
DESCRIPTION
TO-18 OPTION STD NO LEAD CLIP
TO-5 OPTION STD NO LEAD CLIP
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
NO LEADCLIP
LEADCLIP
DIMENSION
327mm x 158mm x 135mm
Immediate Box
Customized
Label
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
5 Ammo boxes per
Intermediate Box
F63TNR
Label
BULK OPTION
See Bulk Packing
Information table
FSCINT Label
375mm x 267mm x 375mm
Intermediate Box
333mm x 231mm x 183mm
Intermediate Box
Anti-static
Bubble Sheets
FSCINT
Label
Customized
Label
FSCINT
Label
Customized
Label
530mm x 130mm x 83mm
FSCINT Label
©2001 Fairchild Semiconductor Corporation
Intermediate box
2000 units per
EO70 box for
std option
10,000 units maximum
per intermediate box
for std option
114mm x 102mm x 51mm
Immediate Box
March 2001, Rev. B1
Loading...