Fairchild MMBF5484, MMBF5485, MMBF5486, 2N5484, 2N5485 Schematics
...
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
2N5484
2N5485
2N5486
G
S
D
TO-92
MMBF5484
MMBF5485
MMBF5486
G
SOT-23
Mark: 6B / 6M / 6H
NOTE: Source & Drain
are interchangeable
S
D
N-Channel RF Amplifier
This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 25 V
Gate-Source Voltage - 25 V
Forward Gate Current 10 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5484-5486 *MMBF5484-5486
P
D
R
JC
θ
R
JA
θ
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556
350
2.8
225
1.8
mW
mW/°C
C/W
°
C/W
°
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
N-Channel RF Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = - 20 V, VDS = 0
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
SMALL SIGNAL CHARACTERISTICS
g
fs
Re(y
is)
g
os
Re(y
os)
Re(y
fs)
C
iss
C
rss
C
oss
NF Noise Figure
Forward Transfer Conductance VDS = 15 V, V
Input Conductance VDS = 15 V, V
Output Conductance VDS = 15 V, V
Output Conductance VDS = 15 V, V
Forward Transconductance VDS = 15 V, V
Input Capacitance VDS = 15 V, V
Reverse Transfer Capacitance VDS = 15 V, V
Output Capacitance VDS = 15 V, V
*Pulse T est: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
= - 1.0 µA, VDS = 0
I
G
= - 20 V, VDS= 0, TA= 100°C
V
GS
= 15 V, ID = 10 nA
V
DS
V
= 15 V, VGS = 0
DS
= 0, f = 1.0 kHz
GS
= 0, f = 100 MHz
GS
= 15 V, V
V
DS
= 15 V, V
V
DS
= 15 V, V
V
DS
= 15 V, RG = 1.0 kΩ,
V
DS
= 0, f = 400 MHz
GS
= 0, f = 1.0 kHz
GS
= 0, f = 100 MHz
GS
= 0, f = 400 MHz
GS
= 0, f = 100 MHz
GS
= 0, f = 400 MHz
GS
= 0, f = 1.0 MHz 5.0 pF
GS
= 0, f = 1.0 MHz 1.0 pF
GS
= 0, f = 1.0 MHz 2.0 pF
GS
f = 100 MHz
V
= 15 V, RG = 1.0 kΩ,
DS
f = 400 MHz
V
= 15 V , RG = 1.0 kΩ,
DS
f = 100 MHz
V
= 15 V, RG = 1.0 kΩ,
DS
f = 400 MHz
5484
5485
5486
5484
5485
5486
5484
5485
5486
5484
5485 / 5486
5484
5485
5486
5484
5485 / 5486
5484
5485
5486
5484
5484
5485 / 5486
5485 / 5486
- 25 V
- 1.0
- 0.2
- 0.3
- 0.5
- 2.0
1.0
4.0
8.0
3000
3500
4000
- 3.0
- 4.0
- 6.0
5.0
10
20
6000
7000
8000
100
1000
50
60
75
75
100
2500
3000
3500
3.0
4.0
2.0
4.0
nA
µA
mA
mA
mA
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
mhos
dB
dB
dB
dB
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
V
V
V
5
T ypical Characteristics
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
20
V = -4.5V
16
12
8
4
D
I - DRAIN CURRENT (mA)
0
7
6
5
4
3
2
1
0
gfs -- TRANSCONDUCTANCE (mmhos)
Transfer Characteristics
GS(OFF)
O
T = -55 C
A
O
T = +25 C
A
O
T = +125 C
A
T = -55 C
A
T = +25 C
A
T = +125 C
A
-2.5 V
V - GATE-SOURCE VOLTAGE(V)
GS
Transconductance
Characteristics
O
T = -55 C
A
-2.5 V
V - GATE-SOURCE VOLTAGE(V)
GS
O
T = +25 C
A
T = +125 C
A
O
V = 15V
DS
O
O
O
V = 15V
DS
T = -55 C
A
T = +25 C
A
T = +125 C
A
V = -4.5V
GS(OFF)
Channe l Resistance vs Temperature
1000
Ω
500
V = -1.0V
300
200
GS(OFF)
-2.5 V
-5.0V
100
50
30
20
DS
r - DRAIN ON RESISTANCE ( )
-5-4-3-2-10
10
-50 0 50 100 150
-8.0 V
V = 100mV
DS
V = 0 V
GS
°°
°
T - AMBI ENT TEM PERATURE ( C)
A
°°
Common Drain-Source
Characteristics
5
4
O
O
O
-5-4-3-2-10
3
2
1
D
I -- DRAIN CURRENT (mA)
0
0 0.2 0.4 0.6 0.8 1
O
T = +25 C
A
TYP V = -5.0V
GS(OFF)
GS
V = 0V
V - DRAIN-SOURCE VOL TAGE(V)
DS
-0.5V
-1.0V
-1.5V
-2.0V
-2.5V
-3.0V
-3.5V
-4.0V
Output Conductance vs
Drain Current
O
T = +25 C
A
f = 1.0 kHz
20
10
V = 5v
DG
5
1
0.5
V = -1.5V
GS(OFF)
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
gos -- OUTPUT CONDUCTANCE (u mhos)
V = -5.5V
GS(OFF)
10
20
5
15
10
15
20
V = -3.5V
GS(OFF)
I -- DRAIN CURRENT (mA)
D
5.0V
10V
15V
20V
Transconductance
Parameter Interactions
Ω
gfs, I @ V = 15 V, V = 0 PULSE
20
DS
10
r -- DRAIN "ON" RESISTANCE ( )
-
1235710
DSDSS
r @ V = 100mV, V = 0
DS
DS
V @ V = 15V, I = 1nA
GS(OFF)
V - GATE-SOURCE VOLTAGE(V)
GS
--
GS
GS
GS D
--
100
50
30
20
10
5
3
2
1
-
DSS
I -- DRAIN CURRE NT ( mA )
gfs --- TRANSCONDUCTANCE ( mmhos )
Typical Characteristics (continued)
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
Transc ond uctance vs
Drain Current
10
V = - 1.5V
GS( OFF)
5
T = +125 C
1
0.5
0.1
gfs -- TRANSCONDUCTANCE (mmhos)
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
O
T = -55 C
A
O
T = +25 C
A
O
A
V = - 5V
GS( OFF)
I - DRAIN CURRENT (mA)
D
T = -55 C
A
T = +25 C
A
T = +125 C
O
O
A
V = 15V
DG
f = 1.0 kHz
Capacitance vs Voltage
10
5
C ( V = 15 V)
1
rs
is
C ( C ) -- CA PACITANCE (pF )
V -- GATE-SOURCE VOLTAGE(V)
GS
f = 0.1 - 1.0 MHz
is
DS
C ( V = 0 V)
rs
DS
Noise Voltage vs Frequency
V = 15V
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2 f @ f > 1.0 kHz
I = 0.5 mA
O
10
5
I = 3 mA
D
n
e - NOISE VOLTAGE ( nV/ Hz )
1
0.01 0.03 0.1 0.3 1 3 10 30 100
D
f -- FREQUENCY (kHz)
Noise Figure Frequency
5
V = 15V
DS
I = 5.0 mA
D
4
R = 1.0 k
g
T = +25 C
A
3
2
NF -- NOISE FIGURE (dB)
1
0
-20-15-10-50
10 20 30 50 100 200 300 500 1000
Ω
O
f -- FREQUENCY (MHz)
5
Power Dissipation vs.
Ambient Temperature
350
300
SOT-23
250
200
150
100
50
D
P - POWER DISS IPATION (mW)
0
0 255075100125150
TO-92
TEMPERATURE ( C)
º
Common Source Characteristics
2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486
N-Channel RF Amplifier
(continued)
Input A d mittance
10
V = 15V
DS
V = 0
5
GS
(CS)
1
b
iss
g
iss
iss
Y -- INPUT ADMITTANCE (mmhos)
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
Forward Transadmittance
10
5
1
fss
Y -- FORWARD TRANSFER (mmhos)
100 200 300 500 700 1000
+g
V = 15V
DS
V = 0
GS
(CS)
fss
-b
fss
f -- FREQUENCY (MHz)
Output Admittance
1
b (x 10)
OSS
g
OSS
V = 15V
DS
V = 0
GS
(CS)
OSS
Y -- OUTPUT CONDUCTANCE (mmhos)
100 200 300 500 700 1000
f -- FREQUENCY (MHz)
Reverse Transadmittance
10
5
- b
1
V = 15V
DS
V = 0
GS
rss
(CS)
Y -- REVERSE TRANSFER (mmhos)
100 200 300 500 700 1000
rss
-g ( X 0.1)
f -- FREQUENCY (MHz)
rss
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