2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
2N5457
2N5458
2N5459
G
S
D
TO-92
MMBF5457
MMBF5458
MMBF5459
G
SOT-23
Mark: 6D / 61S / 6L
D
S
NOTE: Source & Drain
are interchangeable
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Drain-Gate Voltage 25 V
Gate-Source Voltage - 25 V
Forward Gate Current 10 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5457-5459 *MMBF5457-5459
P
D
R
JC
θ
R
JA
θ
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 556
625
5.0
350
2.8
mW
mW/°C
C/W
°
C/W
°
µ
µ
µ
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
V
GS
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = -15 V, VDS = 0
Gate-Source Cutoff Voltage
Gate-Source Voltage
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
= 10 µA, VDS = 0
I
G
= -15 V, VDS = 0, TA = 100°C
V
GS
V
= 15 V, ID = 10 nA
DS
= 15 V, ID = 100 µA
V
DS
V
= 15 V, ID = 200 µA
DS
= 15 V, ID = 400 µA
V
DS
= 15 V, VGS = 0
V
DS
5457
5458
5459
5457
5458
5459
5457
5458
5459
- 25 V
- 1.0
- 200nAnA
- 0.5
- 1.0
- 2.0
1.0
2.0
4.0
- 2.5
- 3.5
- 4.5
3.0
6.0
9.0
- 6.0
- 7.0
- 8.0
5.0
9.0
16
V
V
V
V
V
V
mA
mA
mA
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
SMALL SIGNAL CHARACTERISTICS
g
fs
g
os
C
iss
C
rss
NF Noise Figure VDS = 15 V, VGS = 0, f = 1.0 kHz,
Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz
5457
5458
5459
Output Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz 10 50
Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 4.5 7.0 pF
Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 1.5 3.0 pF
= 1.0 megohm, BW = 1.0 Hz
R
G
*Pulse T est: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
T ypical Characteristics
Transfer Characteristics
Transfer Characteristics
1000
1500
2000
5000
5500
µ
6000
3.0 dB
mhos
mhos
mhos
mhos
5
Typical Characteristics (continued)
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Transfer Characteristics
Common Drain-Source
Transfer Characteristics
Parameter Interaction
Output Conductance vs.
Drain Current
Transconductance vs.
Drain Current
Typical Characteristics (continued)
2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459
N-Channel General Purpose Amplifier
(continued)
Channel Resistance vs.
Temperature
Noise V oltage vs.
Frequency
Capacitance vs. VoltageLeakage Current vs. Voltage
Power Dissipation vs
Ambient Temperature
700
600
500
SOT-23
400
300
200
100
D
P - POWER DISSIPATIO N (mW)
0
0 25 50 75 100 125 150
TO-92
TEMPERA TUR E ( C)
o
5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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TM
TM
FACT™
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GTO™
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SILENT SWITCHER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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