Fairchild 2N5366 service manual
2N5366
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
• Sourced from process 68.
2N5366
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
STG
Electrical Characteristics
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Emitter-Base Voltage 4.0 V
Collector current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CBO
V
CEO
V
EBO
I
CBO
I
CES
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 2.5mA
V
CE
V
(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 2.5mA
BE
(on) Base-Emitter On Voltage VCE = 10V, IC = 2.0mA 0.5 0.8 V
V
BE
C
ob
C
ib
h
fe
Collector-Base Breakdown Voltage IC = 10µA40V
Collector-Emitter Breakdown Voltage IC = 10mA 40 V
Emitter-Base Breakdown Voltage IC = 10µA4.0V
Collector Cut-off Current VCB = 40V 100 nA
Collector Cut-off Current VCB = 40V 100 nA
Emitter Cut-off Current VEB = 4.0V 10
DC Current Gain VCE = 10V, IC = 2.0mA
= 1.0V, IC = 50mA
V
CE
V
= 5.0V, IC = 300mA
CE
80
100
40
300
0.25
= 300mA, IB = 30mA
I
C
1.0
1.1
= 300mA, IB = 30mA
I
C
2.0
Output Capacitance VCB = 10V, f = 1MHz 8.0 pF
Input Capacitance VCB = 0.5V, f = 1MHz 35 pF
Small-Signal Current Gain VCE = 10V, IC = 2.0mA, f = 1MHz 80 450
µ
A
V
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
©2002 Fairchild Semiconductor Corporation Rev. A1, July 2002
Total Device Dissipation
°
Derate above 25
C
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°
C/W
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
2N5366
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, July 2002
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