Fairchild 2N5210, MMBT5210 service manual
2N5210/MMBT5210
g
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
C
B
E
TO-92
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
st
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 50 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 4.5 V
Collector Current - Continuous 100 mA
Operating and Stora ge Junction Temperature Range -55 to +150
C
B
E
SOT-23
Mark: 3M
C
°
2N5210/MMBT5210
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
PD Total Device Dissipation
R
θJC
R
θJA
Derate above 25°C
Thermal Resistance, Junction to Ca se 83.3
Thermal Resistance, Junction to Am bient 200 357
2002 Fairchild Semiconductor Corporation
Characteristic
Max.
2N5210 MMBT5210
625
5.0
350
2.8
Units
mW
mW/°C
C/W
°
°C/W
2N5210, Rev B
(BR)
(BR)
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
NF Noise Fi gure
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V
Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 V
Collector Cutoff Current VCB = 35 V, IE = 0 50 nA
Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Current Gain
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.7 V
)
I
= 100 µA, VCE = 5.0 V
C
I
= 1.0 mA, VCE = 5.0 V
C
= 10 mA, VCE = 5.0 V*
I
C
200
250
250
Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.85 V
Current Gain - Bandwidth Product
I
= 500 µA,V
C
CE
= 5.0 V,
30 MHz
f= 20 MHz
Collector-Base Capacitance VCB = 5.0 V, I
Small-Signal Current Gain IC = 1.0 mA, V
= 0, f = 100 kHz 4.0 pF
E
CE
= 5.0 V,
250 900
f = 1.0 kHz
I
= 20 µA, VCE = 5.0 V,
C
R
= 22 kΩ, f = 10 Hz to 15.7 kHz
S
I
= 20 µA, VCE = 5.0 V,
C
R
= 10 kΩ, f = 1.0 kHz
S
600
2.0
3.0
dB
dB
2N5210/MMBT5210
3
T ypical Characteristics
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
T ypical Pulsed Current Gain
vs Collector Current
1200
1000
800
600
400
200
- TYPICAL PULSED CURRENT GAIN
0
FE
h
0.01 0.1 1 10 100
125 oC
25 oC
0.03
IC - COLLECTOR CURRENT (mA)
VCE = 5.0V
- 40 oC
30.3
Base-Emitter Saturation
V oltage vs Collector Current
1.0
0.8
0.6
0.4
0.2
- COLLECTOR-EMITTER VOLTAGE (V)
0.1 1 10 100
BESAT
V
IC - COLLECTOR CURRENT (mA)
- 40 oC
25 oC
125 oC
ββββ
= 10
Collector-Emitter Saturation
V oltage vs Collector Current
0.30
= 10
ββββ
0.25
0.20
0.15
0.10
0.05
- BASE-EMITTER ON VOLTAGE (V)
BEON
30
0.1 1 10 100
V
IC - COLLECTOR CURRENT (mA)
125 oC
25 oC
- 40 oC
Base-Emitter ON V oltage vs
Collector Current
1.0
0.8
0.6
0.4
0.2
- BASE-EMITTER ON VOLTAGE (V)
BEON
0.1 1 10
V
- 40 oC
IC - COLLECTOR CURRENT (mA)
25 oC
125 oC
VCE = 5.0V
Co llector-C u to ff Cur re nt
vs Ambie nt Temp erature
10
V = 45V
CB
1
CBO
0.1
I - C OLLE CT O R CURRENT (nA)
25 50 75 100 125 150
T - A M BI E NT TE MP ERATURE ( C)
A
°
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