Fairchild 2N5086, 2N5087, MMBT5087 service manual

2N5086/2N5087/MMBT5087

2N5086/2N5087/MMBT5087

PNP General Purpose Amplifier

• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.

TO-92

Absolute Maximum Ratings*

1

1. Emitter 2. Base 3. Collector

Ta=25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

, T

T

J

stg

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

Collector-Emitter Voltage -50 V
Collector-Base Voltage -50 V
Emitter-Base Voltage -3.0 V
Collector current - Continuous -100 mA
Junction and Storage Temperature -55 ~ +150 °C

Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Mi n. Max. Units

Off Characteristics

V

(BR)CEO

V

(BR)CBO

I

CEO

I

CBO

Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -50 V
Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V
Collector Cutoff Current VCB = -10V, IE = 0

V

= -35V, IE = 0

CB

Emitter Cutoff Current VEB = -3.0V, IC = 0 -50 nA

On Characteristics

h

FE

V

CE(sat)

V

BE(on)

DC Current Gain IC = -100µA, VCE = -5.0V

= -1.0mA, VCE = -5.0V

I

C

I

= -10mA, VCE = -5.0V

C

Collector-Emitter Saturation Voltage IC = -10mA, IB = -1.0mA -0.3 V
Base-Emitter On Voltage IC = -1.0mA, VCE = -5.0V -0.85 V

Small Signal Characteristics

f

T

C

cb

h

fe

Current Gain Bandwidth Product IC = -500µA, VCE = -5.0V, f = 20MHz 40 MHz
Collector-Base Capacitance V

= -5.0V, IE = 0, f = 100KHz 4.0 pF

CB

Small-Signal Current Gain IC = -1.0mA, VCE = -5.0V,

f = 1.0KHz

NF Noise Figure I

= -100µA, VCE = -5.0V

C

= 3.0kΩ, f = 1.0KHz

R

S

3

2

SOT-23

1

Mark: 2Q

1. Base 2. Emitter 3. Collector

-10

-50

5086
5087
5086
5087
5086
5087

5086
5087

5086
5087

150
250
150
250
150
250

150
250

500
800

600
900

3.0

2.0

nA
nA

dB
dB

I

= -20µA, VCE = -5.0V

C

= 10kΩ

R

S

5086
5087

3.0

2.0

dB
dB

f = 10Hz to 15.7KHz

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Thermal Characteristics T

Symbol Parameter

P

D

R

θJC

R

θJA

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."

Total Device Dissipation
Derate above 25°C

Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200 357 °C/W

=25°C unless otherwise noted

a

2N5086
2N5087

625

5.0

Max.

*MMBT5087

350

2.8

Units

mW

mW/°C

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

Typical Characteristics

β

0.1 1 10

0

0.05

0.1

0.15

0.2

0.25

0.3

I - COLL ECT OR CU RR EN T (mA )

V - COLLECTOR EMITTER VOLTAGE (V)

C

CESAT

β

= 10

25 °C

- 40 °C

125 °C

β

β

0.1 1 10 25

0

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE EMITTER ON VOLTAGE (V)

C

BEON

V = 5V

CE

25 °C

- 40 °C

125 °C

β

β

048121620

0

4

8

12

16

20

REVERSE BIAS VOLTAGE (V)

CAP ACITAN CE (pF)

f = 1 MHz

C

obo

C

ibo

β

2N5086/2N5087/MMBT5087

350

300

125 °C

V = 5V

CB

250

200

25 °C

150

- 40 °C

100

50

FE

0.01 0.03 0.1 0.3 1 3 10 30 100

h - TYPICAL PULSED CU R RENT GAIN

I - COLLECTOR CURRENT (mA)

C

Figure 1. Typical Pulsed Current Gain

vs Collector Current

Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current

1

0.8

0.6

0.4

0.2

- 40 °C

25 °C

125 °C

β

= 10

BESAT

0

V - BASE EMITTER VOLTAG E (V )

0.1 1 10 50

I - COLLECTOR CURRE NT (mA)

C

Figure 3. Base-Emitter Saturation Voltage

vs Collector Current

100

V = 40V

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

0.01
25 50 75 100 125

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

Figure 5. Collector Cutoff Current

T - A MBIE NT T EMP ERATURE ( C)

A

vs Ambient Temperature

Figure 4. Base-Emitter On Voltage

vs Collector Current

°

Figure 6. Input and Output Capacitance

vs Reverse Voltag

2N5086/2N5087/MMBT5087

µΩ

µΩ

µΩ

100 1000 10000 1000000

0

1

2

3

4

5

f - FREQUENCY (Hz )

NF - NOIS E FI G U RE (dB)

V = 5V

CE

I = - 250 µA, R = 5.0 k

Ω

C S

I = - 500 µA, R = 1.0 k

Ω

C

S

I = - 20 µA, R = 10 k

Ω

C

S

µΩ
µΩ

µΩ

µΩ
µΩ

µΩ

0 25 50 75 100 125 150

0

125

250

375

500

625

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

D

o

TO-92

SOT-23

µΩ
µΩ

µΩ

µ

µ

Ω

√
µ

µΩ
µΩ

µΩ

0.001 0.01 0.1 1

0.001

0.002

0.005

0.01

0.02

0.05

0.1

I - COLLECTOR CU RRE NT (mA)

e - EQUIVALENT INPUT NOISE VOLTAGE ( V/ Hz)

V = - 5.0V

CE

C

e , f = 100 H z

n

e , f = 1.0 kHz

n

e , f = 10 kHz

n

n

2

√

√
µ

Typical Characteristics

350

V = 5V

CE

300
250
200
150
100

50

0

T

0.1 1 10 100

f - GAIN BANDWIDTH PRODUCT (MHz)

8

6

4

I - COLLECTOR CURRENT (mA)

C

Figure 7. Gain Bandwidth Product

vs Collector Current

V = 5V

CE

BANDWIDTH = 15.7 k Hz

I = 10 µA

C

(Continuce)

Figure 8. Noise Figure vs Fre quency

I = 100 µA

C

2

NF - NOIS E FI GURE ( d B)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

R - SOUR CE RESIS TANCE ( )

S

Figure 9. Wideband Nois e Fre quency

vs Source Resistance

√

10

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

V = - 5.0V

CE

5

2
1

0.5

0.2

0.1

2

0.001 0.01 0.1 1

n

i - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)

√

I - COLLE CTOR CURRENT (mA)

C

Figure 11. Equivalent Input Noise Current

vs Collector Current

i , f = 1 00 Hz

n

i , f = 1.0 kHz

n

i , f = 1 0 kHz

n

Ω

Figure 10. Power Dissipation vs

Ambient Temperature

Figure 12. Equivalent Input Noise Voltage

vs Collector Current

2N5086/2N5087/MMBT5087

Ω

0.001 0.01 0.1 1

100

1,000

10,000

100,000

1,000,000

I - COLLECTOR CURRENT (mA)

R - SOURCE RESISTANCE ( )

12 dB

C

Ω

S

8.0 d B

5.0 d B

3.0 d B

V = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz

CE

12 dB

8.0 d B

5.0 d B

Ω

Ω

Ω

Ω

0.01 0.1 1 10

100

200

500

1,000

2,000

5,000

10,000

I - COLLECTOR CURRE NT (mA)

R - SOU RC E RESISTANCE ( )

C

Ω

S

6.0 d B

4.0 d B

V = - 5V
f = 10 MHz
BANDWIDT H
= - 2 kHz

CE

6.0 d B

4.0 d B

2.0 d B

Typical Characteristics

1,000,000

Ω

100,000

10,000

1,000

V = - 5V

S

R - SOURCE RESISTANCE ( )

f = 10 kHz

BANDWIDTH = 1.5 kHz

100

0.001 0.01 0.1 1

Figure 13. C ontours of Co ns tanct

1,000,000

Ω

100,000

10,000

1,000

S

R - SOURCE RESIST ANCE ( )

100

0.001 0.01 0.1 1

Figure 15. BContours of Cons tant

1.0 d B

4.0 d B

6.0 d B

10 dB

CE

I - COLLECTOR CURRENT (mA)

C

Narrow Band Noise Figure

10 dB

6.0 d B

4.0 d B

4.0 d B

6.0 d B

10 dB

I - COLLECTOR CURRE NT (mA)

C

Narrow Band Noise Figure

(Continuce)

10 dB

6.0 d B

4.0 d B

2.0 d B

V = - 5V

CE

f = 1.0 kHz
BANDWIDTH = 150 Hz

Figure 14. Co ntours of Constanct

Narrow Band Noise Figure

Figure 16. Contours of Cons tant

Narrow Band Noisd Figure

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

2N5086/2N5087/MMBT5087

0.1 0.2 0.5 1 2 5 10

0.01

0.1

1

10

100

I - COLLECTOR CURRE NT (mA)

HARACTERISTICS REL. TO VALUE, I =1.0mA

C

T = -2 5 C

A

V = -5.0V

CE

C

h

ie

f = 1.0 kHz

°

h

fe

h

oe

Typical Common Emitter Characteristics

1.6

CE

1.4

1.2

1

0.8

f = 1.0 kHz
I = 1.0 mA

C

0.6

T = -25 C

A

°

0.4

HARACT ERI S TICS REL . TO VALU E, V =-5.0V

V - COLLECTOR-EMITTER VOLTAGE (V)

CE

Typical Common Emitter Characteristics Typical Common Emitter Characteristics

°

A

2

V = -5.0V

CE

I = 1.0 mA

1.8

C

f = 1.0 kHz

1.6

1.4

1.2
h and h

fe oe

1

0.8

h

0.6

0.4

-60 -40 -20 0 20 40 60 80 100

CHARACTERISTICS REL. TO VALUE, T = 25 C

ie

T - A MBIENT TEMP ERATURE ( C)

A

h and h

fe ie

h

oe

-25-20-15-10-50

h

ie

h

fe

h

oe

°

(f = 1.0KHz)

Typical Common Emitter Characteristics

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

Package Dimensions

0.46

±0.10

4.58

+0.25
–0.15

2N5086/2N5087/MMBT5087

TO-92

±0.20

4.58

±0.40

1.27TYP

[1.27

±0.20

3.86MAX

±0.10

1.02

+0.10

–0.05

0.38

14.47

1.27TYP

]

3.60

±0.20

[1.27

±0.20

]

0.38

+0.10
–0.05

(0.25)

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. B1, September 2003

2N5086/2N5087/MMBT5087

Package Dimensions

0.40

±0.03

(Continued)

SOT-23

0.45~0.60

±0.10

0.20 MIN

±0.10

0.03~0.10

2.40

0.38 REF

0.95

2.90

±0.03

1.90

±0.10

0.95

±0.03

±0.03

0.40

±0.03

0.97REF 1.30

0.508REF

0.96~1.14

0.12

+0.05
–0.023

Dimensions in Millimeters

©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003

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intended to be an exhaustive list of all such trademarks.

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2

CMOS™

E
EnSigna™
FACT™

FACT Quiet Series™

®

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2

C™

I
ImpliedDisconnect™
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Across the board. Around the world.™
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OPTOLOGIC

®

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Power247™
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®

®

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DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2003 Fairchild Semiconductor Corporation Rev. I5

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.