Fairchild 2N5086, 2N5087, MMBT5086, MMBT5087 datasheet

g

2N5086 / MMBT5086 / 2N5087 / MMBT5087

2N5086 2N5087

C

B

E

TO-92

MMBT5086 MMBT5087

C

SOT-23

Mark: 2P / 2Q

B

E

PNP General Purpose Amplifier

This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

st

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Collector-Emitter Voltage 50 V Collector-Base Voltage 50 V Emitter-Base Voltage 5.0 V Collector Current - Continuous 100 mA Operating and Stora ge Junction Temperature Range -55 to +150

°

C

Thermal Characteristics TA= 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5086 2N5087

P

D

R

θJC

R

θJA

Total Device Dissipation

Derate above 25°C

Thermal Resistanc e, Junction to Case 83.3 Thermal Resistanc e, Junction to Ambient 200 357

625

5.0

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

*MMBT5086 *MMBT5087

350

2.8

2N5086/2N5087/MMBT5086/MMBT5087, Rev A

mW

mW/°C

°C/W °C/W

(BR)

PNP General Purpose Amplifier

(continued)

Electrical Characteristics TA= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

CEO

V

CBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

CE(

sat

V

BE(on)

Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 50 V Collector-Base Breakdown Voltage

= 100 µA, IE = 0

I

C

50 V

Collector Cutoff Current VCB = 10 V, IE = 0

V

= 35 V, IE = 0

CB

Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA

DC Current Gain

I

= 100 µA, VCE = 5.0 V 5086

C

5087

= 1.0 mA, VCE = 5.0 V 5086

I

C

5087

= 10 mA, VCE = 5.0 V 5086

I

C

5087

Collector-Emitter Saturat ion V olt age IC = 10 mA, IB = 1.0 mA 0.3 V

)

150 250 150 250 150 250

Base-Emitt er O n Voltage IC = 1.0 mA, VCE = 5.0 V 0.85 V

10 50

500 800

nA nA

2N5086 / MMBT5086 / 2N5087 / MMBT5087

SMALL SIGNAL CHARACTERISTICS

f

T

C

cb

h

fe

NF Noise Figure

Current Gain - Bandwidth Product

I

= 500 µA,VCE= 5.0 V,f= 20 MHz

C

Collector-Base Capacitance VCB = 5.0 V, I Small-Signal Current Gain

= 1.0 mA, V

I

C

f = 1.0 kHz 5087 I

= 100 µA, VCE = 5.0 V, 5086

C

R

= 3.0 kΩ, f = 1.0 kHz 5087

S

I

= 20 µA, VCE = 5.0 V, 5086

C

R

= 10 kΩ, 5087

S

f = 10 Hz to 15.7 kHz

40 MHz

= 0, f = 100 kHz 4.0 pF

E

= 5.0, 5086

CE

150 250

600 900

3.0

2.0

3.0

2.0

*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Spice Model

PNP (Is=6.734f Xti=3 Eg=1.1 1 V af=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2 Isc=0 Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5 Xtf=8 Rb=10)

dB dB

3

T ypical Characteristics

2N5086 / MMBT5086 / 2N5087 / MMBT5087

PNP General Purpose Amplifier

(continued)

Typical P uls ed C u rrent Gain

vs Collector Current

350

125 °C

300

250

200

25 °C

150

- 40 °C

100

50

FE

0.01 0.03 0.1 0.3 1 3 10 30 100

h - TYPICAL PULSED CURRENT GAIN

I - COLLECTOR CURRENT (mA)

C

V = 5V

CB

Base-Emitter Sa turati o n

Voltage vs Collector Cur re nt

1

0.8

0.6

0.4

0.2

BESAT

V - BASE EM ITTER VOLTAGE (V)

- 40 °C

25 °C

125 °C

β

0

0.1 1 10 50

I - COLLECTOR CURRE NT (mA)

C

= 10

Co ll ector-Emitt er Sa turatio n

Vo ltage vs Co ll ector Cur rent

0.3

0.25

0.2

0.15

0.1

0.05

0

0.1 1 10

CESAT

V - COLL ECT O R EMI TTE R VOLTAGE (V)

= 10

β

25 °C

125 °C

- 40 °C

I - COL LE CTO R CU RR EN T (mA )

C

Base Emitter ON Voltage vs

Co llector Curre nt

1

0.8

- 40 °C

0.6

0.4

0.2

0

BEON

0.1 1 10 25

V - BASE EMITTER ON VOLTA GE (V)

25 °C

125 °C

V = 5V

CE

I - COLLECTOR CURRE NT (mA)

C

Co llector-C uto ff Cur re nt vs Amb ient Temp erature

100

V = 4 0V

CB

10

1

0.1

CBO

I - COLLECTOR CURRENT (nA)

0.01 25 50 75 100 125

T - AMBI ENT T EMP ERATURE ( C)

A

°

Input and Output Capa citance

vs Reverse Bias Voltage

20

16

12

8

C

CAP ACITANCE (pF)

4

0

048121620

ibo

REVERSE BIAS VOLTAGE (V)

f = 1 MHz

C

obo

Typical Characteristics (continued)

2N5086 / MMBT5086 / 2N5087 / MMBT5087

PNP General Purpose Amplifier

(continued)

Gain Bandwidth Product

vs Collector Current

350

V = 5V

CE

300 250 200 150 100

50

0

T

0.1 1 10 100

f - GAIN BANDWIDTH PRODUCT (MHz)

I - COLLECTOR CURRENT (mA)

C

Wideb and Noise Fr e quency

vs Source Resistance

8

6

I = 10 µA

C

4

I = 100 µA

C

2

NF - NOISE FIGURE ( d B)

0

1,000 2,000 5,000 10,000 20,000 50,000 100,000

R - SOUR CE RES I STANCE ( )

S

V = 5V

CE

BANDWIDTH = 15.7 k Hz

Ω

Noise Figure vs Frequency

5

4

3

2

1

NF - NOIS E FI G U RE (d B)

0

100 1000 10000 1000000

I = - 250 µA, R = 5.0 k

C S

I = - 500 µA, R = 1.0 k

C

I = - 20 µA, R = 10 k

C

f - FREQUENCY (Hz)

S

Ω Ω

Ω

V = 5V

CE

Powe r Dis sipat ion vs

Ambient Temperature

625

500

SOT-23

375

250

125

D

P - POWER DISSIPATION (mW)

0

0 25 50 75 100 125 150

TO-92

TEMPERATURE ( C)

o

3

Equiv alent In put Noise C urr e nt

√

10

5

2 1

0.5

0.2

0.1

2

0.001 0.01 0.1 1

n

i - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)

√

vs Collector Curren t

V = - 5.0V

CE

i , f = 100 Hz

n

i , f = 1.0 kHz

n

i , f = 10 kHz

n

I - COLLECT OR CU RRENT (mA )

C

Equivalent Input Noise Voltage

√

0.1

µ

0.05

0.02

0.01

0.005

0.002

0.001

2

n

0.001 0.01 0.1 1

e - EQUIVALENT INPUT NOISE VOLT AGE ( V/ Hz)

√

vs Collector Current

V = - 5.0V

CE

e , f = 100 Hz

n

e , f = 1.0 kHz

n

I - COLLE CTOR CURR ENT (mA)

C

e , f = 10 kHz

n

Typical Characteristics (continued)

2N5086 / MMBT5086 / 2N5087 / MMBT5087

PNP General Purpose Amplifier

(continued)

Contour s of Const a nt

Narrow Band Noise Figure

1,000,000

Ω

100,000

10,000

1,000

V = - 5V f = 10 kHz

S

R - SOURCE RESISTANCE ( )

BANDWIDTH = 1.5 kHz

100

0.001 0.01 0.1 1

1.0 dB

4.0 dB

6.0 dB

10 dB

CE

I - COLLECTOR CURRENT (mA)

C

Cont ours of Co nst a nt

Narrow Band Noise Fi gure

1,000,000

Ω

100,000

10,000

1,000

S

R - SOURCE RESISTANCE ( )

100

4.0 dB

6.0 dB

10 dB

0.001 0.01 0.1 1

I - COLLECTO R CU RRENT (mA)

C

10 dB

6.0 dB

4.0 dB

V = - 5V

CE

f = 1.0 kHz BANDWIDTH = 150 Hz

4.0 dB

2.0 dB

10 dB

6.0 dB

Con t ours of Co ns t a nt

Narrow Band Noise Figure

1,000,000

Ω

100,000

10,000

8.0 dB

1,000

S

R - SOUR C E RESISTANCE ( )

100

0.001 0.01 0.1 1

12 dB

I - COLLECTOR CU RRENT (mA )

C

5.0 dB

3.0 dB

12 dB

8.0 dB

V = - 5V

CE

f = 100 Hz BANDWIDTH = 15 Hz

Contours o f Const ant

Narrow Band Noise Figur e

10,000

Ω

5,000

2,000

1,000

500

200

S

R - SOU RCE RESIS TANCE ( )

100

0.01 0.1 1 10

4.0 dB

6.0 dB

V = - 5V

CE

f = 10 MHz BANDWI DTH = - 2 kHz

I - COLL ECTOR CURRENT (mA)

C

2.0 dB

6.0 dB

4.0 dB

Fairchild 2N5086, 2N5087, MMBT5086, MMBT5087 datasheet

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