Fairchild MMBT4401, 2N4401 Schematics
g
A
C
B
E
TO-92
NPN General Pupose Amplifier
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.
MMBT44012N4401
C
SOT-23
Mark: 2X
2N4401 / MMBT4401
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
st
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous 600 mA
Operating and Stora ge Junction Temperature Range -55 to +150
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4401 *MMBT4401
P
D
R
θ
JC
R
θ
J
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Devi ce Dissi pation
Derate above 25°C
625
5.0
350
2.8
Ther mal Resist ance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
mW
mW/°C
C/W
°
C/W
°
2001 Fairchild Semiconductor Corporation
2N4401/MMBT4401, Rev A
(BR)
(BR)
(BR)
r
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
BL
I
CEX
ON CHARACTERISTICS*
h
FE
V
CE(sat)
V
BE(sat)
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V
Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V
Base Cutoff Current VCE = 35 V, V
Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
DC Current Gain IC = 0.1 mA, VCE = 1.0 V
I
= 1.0 mA, VCE = 1.0 V
C
I
= 10 mA, VCE = 1.0 V
C
I
= 150 mA, VCE = 1.0 V
C
I
= 500 mA, VCE = 2.0 V
C
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
I
= 500 mA, IB = 50 mA
C
Base-Emitter Saturation Voltag e IC = 150 mA, IB = 15 mA
I
= 500 mA, IB = 50 mA
C
= 0.4 V 0.1
EB
20
40
80
100
40
0.75 0.95
µ
µ
300
0.4
0.75
1.2
A
A
V
V
V
V
2N4401 / MMBT4401
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V,
Collector-Base Capacitance VCB = 5.0 V, IE = 0,
Emitter-Base Ca p acitance VBE = 0.5 V, IC = 0,
Input Impedance IC = 1.0 mA, VCE = 10 V,
Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V,
Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V,
Output Admittance IC = 1.0 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
d
t
t
s
t
f
Delay Time VCC = 30 V, V
Rise Time IC = 150 mA, IB1 = 15 mA 20 ns
Storage Time VCC = 30 V, IC = 150 mA 225 ns
Fall Time IB1 = IB2 = 15 mA 30 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
f = 140 kHz
f = 140 kHz
f = 1.0 kHz
f = 1.0 kHz
f = 1.0 kHz
f = 1.0 kHz
250 MHz
6.5 pF
30 pF
1.0 15
0.1 8.0
40 500
1.0 30
= 2 V, 15 ns
E
B
x 10
mhos
µ
3
k
Ω
-4
T ypical Characteristics
2N4401 / MMBT4401
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
200
25 °C
100
FE
h - TYPICAL PULSED CURRENT GAIN
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
Base- Emitter Saturation
Voltag e vs Collect or Current
β = 10
1
- 40 °C
0.8
0.6
0.4
BESAT
V - BASE-EMITTER VOLTAGE (V)
1 10 100 500
25 °C
125 °C
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collecto r-Em itt er Sa tu rat io n
Voltage vs Collector Current
0.4
= 10
0.3
0.2
0.1
CES AT
V - COL LE C TOR-EMI TTER VOLTAGE (V)
β
125 °C
25 °C
- 40 °C
110100500
I - COLLEC TO R CU RRENT (mA)
C
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
BE(ON )
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
0.1 1 10 25
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs Ambient Temperature
500
V = 40V
100
CB
10
1
0.1
CBO
I - COLLECT OR CUR R ENT (nA)
25 50 75 100 125 150
T - AMBIENT TEMPERATU RE ( C)
A
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
16
12
8
CAPACITANCE (pF)
4
C
ob
0.1 1 10 100
RE VERSE BIAS VOLTAGE (V)
C
te
f = 1 MHz
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