Fairchild 2N4400, MMBT4400 service manual
2N4400 / MMBT4400
MMBT4400
C
SOT-23
Mark: 83
B
E
C
B
E
2N4400
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Emitter-Base Voltage 6.0 V
Collector Current - Continuous600 mA
Operating and Storage Junction Temperature Range -55 to +150
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4400 *MMBT4400
P
D
R
θ
JC
R
θ
JA
2001 Fairchild Semiconductor Corporation
Total Device Dissipa tion
Derate above 25°C
Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
C/W
°
C/W
°
2N4400/MMBT4400, Rev A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltag e
Emitter-Base Breakdown Voltage
I
= 100 µA, IE = 0
C
I
= 100 µA, IC = 0
E
60 V
6.0 V
Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
Emitter Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
DC Current Gain VCE = 1.0 V, IC = 1.0 mA
V
= 1.0 V, IC = 10 mA
CE
V
= 1.0 V, IC = 150 mA
CE
V
= 2.0 V, IC = 500 mA
Collector-Emitte r Saturation Voltage IC = 150 mA, IB =15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB =15 mA
)
CE
I
= 500 mA, IB = 50 mA
C
I
= 500 mA, IB = 50 mA
C
20
40
50
20
0.75 0.95
150
0.40
0.75
1.2
A
µ
A
µ
V
V
V
V
2N4400 / MMBT4400
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
ie
h
re
h
oe
Output Capacitance VCB = 5.0 V, f = 140 kHz 6.5 pF
Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
Small-Si gnal Curre nt Gain IC = 20 mA, VCE = 10 V,
Small-Si gnal Curre nt Gain VCE = 10 V, IC = 1.0 mA, 20 250
Input Impedance f = 1.0 kHz 0.5 7.5
Voltage Feedback Ratio 0.1 8.0
Output Admittance 1.0 30
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay TimeVCC = 30 V, IC = 150 mA,15ns
Rise Time IB1 = 15 mA ,V
Storage Time VCC = 30 V, IC = 150 mA 225 ns
Fall Time IB1 = IB2 = 15 mA 30 ns
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
f = 100 MHz
EB
= 2 V
2.0
20
x 10
mhos
µ
K
ns
Ω
-4
T ypical Characteristics
2N4400 / MMBT4400
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
500
400
125 °C
300
200
25 °C
100
FE
h - TYPICAL PULSED CURRENT GAIN
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I - COLLECTOR CURRENT (mA)
C
Base- Emitter Saturation
Voltag e vs Coll ector Cu rrent
β = 10
1
- 40 °C
0.8
0.6
0.4
BESAT
V - BASE-E MITTER VOLTAGE (V)
1 10 100 500
25 °C
125 °C
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
Collecto r-Em itt er Sa tu rat io n
Voltage vs Collector Current
0.4
= 10
0.3
0.2
0.1
CES AT
V - COLLEC TOR-EMI TTER VOLT A GE (V )
β
125 °C
25 °C
- 40 °C
110100500
I - COLLEC TO R CU RRENT (mA)
C
Base-Emitter ON Voltage vs
Collector Current
1
V = 5V
CE
0.8
0.6
0.4
0.2
BE(ON)
V - BASE-EMITTER ON VOLTAGE (V)
- 40 °C
25 °C
125 °C
0.1 1 10 25
I - COLLECTOR CURRENT (mA)
C
Collector-Cutoff Current
vs Ambient Temperature
500
V = 40V
100
CB
10
1
0.1
CBO
I - COLLECTOR CURRENT ( n A)
25 50 75 100 125 150
T - AMBIENT TE MPERATU RE ( C)
A
°
Emitter Transition and Output
Capacitance vs Reverse Bias V oltage
20
16
12
8
CAPACITANCE (pF)
4
C
ob
0.1 1 10 100
RE VERSE BIAS VOLTAGE (V)
C
te
f = 1 MHz
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