Fairchild 2N4126, MMBT4126 service manual
2N4126 MMBT4126
g
A
C
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching applications at collector currents to 10 µA as a switch and to
100 mA as an amplifier.
TO-92
C
SOT-23
Mark: ZF
2N4126 / MMBT4126
E
B
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
st
Collector-Emitter Voltage 25 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 4.0 V
Collector Current - Continuous 200 mA
Operating and Stora ge Junction Temperature Range -55 to +150
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol Characteristic Max Units
2N4126 *MMBT4126
P
D
R
θ
JC
R
θ
J
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
Ther mal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357
mW
mW/°C
C/W
°
C/W
°
2001 Fairchild Semiconductor Corporation
2N4126/MMBT4126, Rev A
(BR)
(BR)
(BR)
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
V
EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(sat)
V
BE(sat)
SMALL SIGNAL CHARACTERISTICS
f
T
C
ibo
C
cb
h
fe
NF Noise Figure
Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 25 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
I
= 10 µA, IE = 0
C
= 10 µA, IC = 0
I
C
Collector Cutoff Current VCB = 20 V, I
= 0 50 nA
E
25 V
4.0 V
Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Current Gain IC = 2.0 mA, VCE = 1.0 V
= 50 mA, VCE = 1.0 V
I
C
120
60
360
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.4 V
Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,
250 MHz
f = 100 MHz
Input Capacitance VEB = 0.5 V, IC = 0,
10 pF
f = 1.0 MHz
Collector-Base Capcitance VCB = 5.0 V, IE = 0,
4.5 pF
f = 100 kHz
Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,
120 480
f = 1.0 kHz
I
= 100 µA, VCE = 5.0 V,
C
=1.0 kΩ, f=10 Hz to 15.7 kHz
R
S
4.0 dB
2N4126 / MMBT4126
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
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