FAGOR FS0402MH, FS0402DH Datasheet

On-State Current

4 Amp

FS0402.H

SENSITIVE GATE SCR

These series of Silicon Controlled
R ectifier use a high performance

PNPN technology.

These parts are intended for general
purpose applications where high gate
sensitivity is required.

Feb - 03

Absolute Maximum Ratings, according to IEC publication No. 134

On-state Current

Average On-state Current

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Reverse Gate Voltage

Peak Gate Current

Peak Gate Dissipation

Gate Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature

I

T(RMS)

PARAMETER CONDITIONS Min. Max. Unit

Gate Trigger Current

< 200 µA

Off-State Voltage

200 V ÷ 600 V

SYMBOL

I

T(AV)

I

TSM

I

TSM

I2t
V

GRM

I

GM

P

GM

P

G(AV)

T

j

T

stg

T

sld

180º Conduction Angle, Tc = 115 ºC

Half Cycle, Θ = 180 º, T

C

= 115 ºC

Half Cycle, 60 Hz

Half Cycle, 50 Hz

t

p

= 10ms, Half Cycle

I

GR

= 10 µA

20 µs max.

20 µs max.

20ms max.

10s max.

-40

-40

A

A

A

A

A

2

s

V

A

W

W

ºC

ºC

ºC

4

2.5

33

30

4.5

8

4

5

0.5

+125

+150

260

Repetitive Peak Off State

Voltage

PARAMETER CONDITIONS VOLTAGE UnitSYMBOL

V

DRM

V

RRM

R

GK

= 1 KΩ

B

200 V

D

400

M

600

TO220-AB

K

A

G

A

FS0402.H

SENSITIVE GATE SCR

Feb - 03

PART NUMBER INFORMATION

FAGOR

SCR

CURRENT

CASE

VOLTAGE

SENSITIVITY

F S 04 02 B H 00

FORMING

TU

PACKAGING

Electrical Characteristics

Gate Trigger Current

Off-State Leakage Current

On-state Voltage

Gate Trigger Voltage

Gate Non Trigger Voltage

Holding Current

PARAMETER CONDITIONS SENSITIVITY

Unit

SYMBOL

I

GT

I

DRM

VD = 12 V

DC

, R

L

= 33Ω. T

j

= 25 ºC

02

200

1

5

1.6

0.8

0.1

mA

µA

V

V

V

MAX

MAX

MAX

MAX

MIN

50

60

MAX

/ I

RRM

V

TM

V

GT

V

GD

I

H

di / dt

R

th(j-a)

Critical Rate of Current Rise

Thermal Resistance
Junction-Amb for DC

ºC/W

V

D

= V

DRM

, Tj = 125 ºC

T

j

= 25 ºC

V

R

= V

RRM

,

at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC

IT = 50 mA,

Tr ≤ 100 ns, f = 60 Hz,

T

j

= 125 ºC

VD = 12 V

DC

, R

L

= 33Ω, T

j

= 25 ºC

V

D

= V

DRM

, R

L

= 3.3KΩ,

T

j

= 125 ºC

mA

MIN

A/µs

R

d

T

j

= 125 ºC

R

d

Dynamic resistance MAX

90

mΩ

5

MAX

I

L

mA

6

Latching Current

I

G

= 1 mA,

V/µs

dv / dt

Critical Rate of Voltage Rise MIN

5

3

R

th(j-c)

Thermal Resistance
Junction-Case for DC

ºC/W

V

t0

T

j

= 125 ºC

Threshold Voltage MAX

0.85

V

IG = 2 x I

GT

R

GK

= 220Ω

R

GK

= 220Ω

R

GK

= 220Ω

T

j

= 25 ºC

R

GK

= 1 KΩ

V

D

= 0.65 x V

DRM

, R

GK

= 220Ω,

T

j

= 125 ºC

µA

MAX