FAGOR FS0204DB, FS0204DA, FS0204BB, FS0204BA, FS0203NA Datasheet
...
G
G
K
On-State Current
1.25 Amp
FS02...A/B
SENSITIVE GATE SCR
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general
purpose applications where high gate
sensitivity is required.
Jun - 02
Absolute Maximum Ratings, according to IEC publication No. 134
On-state Current
Average On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Reverse Gate Voltage
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
TO92
(Plastic)
RD26
(Plastic)
FS02...A
FS02...B
Gate Trigger Current
< 200 µA
Off-State Voltage
200 V ÷ 800 V
SYMBOL
I
T(AV)
I
TSM
I
TSM
I2t
V
GRM
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, TL = 60 ºC
Half Cycle, Θ = 180 º, T
L
= 60 ºC
Half Cycle, 60 Hz, T
j
= 25 ºC
Half Cycle, 50 Hz, T
j
= 25º C
t
p
= 10ms, Half Cycle
I
GR
= 10 µA, Tj = 25 ºC
20 µs max.
20 µs max.
20ms max.
1.6 mm from case, 10s max.
1.25
0.8
25
22.5
2.5
8
-40
-40
A
A
A
A
A
2
s
V
A
W
W
ºC
ºC
ºC
1.2
3
0.2
+125
+150
260
A
K
A
Repetitive Peak Off State
Voltage
PARAMETER CONDITIONS VOLTAGE UnitSYMBOL
V
DRM
V
RRM
R
GK
= 1 KΩ
B
200
V
D
400
M
600N800
FS02...A/B
SENSITIVE GATE SCR
Jun - 02
PART NUMBER INFORMATION
FAGOR
SCR
CURRENT
CASE
VOLTAGE
SENSITIVITY
F S 02 01 B A 00
FORMING
BU
PACKAGING
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
On-state Threshold Voltage
Dinamic Resistance
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
PARAMETER CONDITIONS SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
VD = 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
01
1
20
µA
04
15
50
500
5
1.45
0.9
200
0.8
0.1
15
µA
V
V
mΩ
V
V
mA
mA
V/µs
MIN
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MIN
MIN
50
60
150
A/µs
/ I
RRM
V
TM
V
T(O)
r
d
V
GT
I
H
I
L
dv / dt
di / dt
R
th(j-l)
R
th(j-a)
Critical Rate of Voltage
Rise
Critical Rate of Current Rise
Thermal Resistance
Junction-Leads for DC
Thermal Resistance
Junction-Ambient
ºC/W
ºC/W
V
D
= V
DRM
, R
GK
= 1KΩ, T
j
= 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC
Tj = 125 ºC
T
j
= 125 ºC
V
D
= 12 V
DC
, R
L
= 140Ω, T
j
= 25 ºC
I
T
= 50 mA , R
GK
= 1KΩ, T
j
= 25 ºC
I
G
= 1 mA , R
GK
= 1KΩ, T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, R
GK
= 1KΩ,
T
j
= 125 ºC
5
6
02
200
03
20
200
15 2010
Tr ≤ 100 ns, F = 60 Hz,
T
j
= 125 ºC
I
G
= 2 x I
GT
V
GD
VD = V
DRM
, R
L
= 3.3KΩ,
T
j
= 125 ºC
R
GK
= 1KΩ,
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