FAGOR FS 0102DA Datasheet

FS01...A

SENSITIVE GATE SCR

TO92

(Plastic)

On-State Current

0.8 Amp

Off-State Voltage

200 V to 800 V

K

G

A

This series of Silicon Controlled Rectifiers

FS01...A

uses a high performance PNPN technology.

This part is intended for general purpose applications where high gate sensitivity is required.

Absolute Maximum Ratings, according to IEC publication No. 134

Gate Trigger Current

< 200 µA

SYMBOL

I

T(RMS)

I

T(AV)

I

TSM

I

TSM

I2t

I

GM

P

GM

P

G(AV)

T

j

T

stg

T

sld

SYMBOL

V

DRM

V

RRM

PARAMETER

On-state Current

Average On-state Current

Non-repetitive On-State Current

Fusing Current

Peak Gate Current

Peak Gate Dissipation

Gate Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature

PARAMETER

Repetitive Peak Off State Voltage

CONDITIONS

180° Conduction Angle, T

Q

Half Cycle,

= 180°, TC = 115 °C

Half Cycle, 60 Hz

Half Cycle, 50 Hz

= 10ms, Half Cycle

t

p

20 µs max.

10s max.

CONDITIONS

RGK = 1 k

W

= 115 °C

c

Value Unit

0.8

0.5

8

7

0.24

1

2

0.1

(-40 to + 125)

(-40 to + 150)

260

VOLTAG E

B

200D400M600N800

A

W

°C

2

s

Unit

V

Dec - 08

Electrical Characteristics

FS01...A

SENSITIVE GATE SCR

SYMBOL

I

GT

V

GT

V

GD

V

RGM

I

H

I

L

dV / dt

dI / dt

V

TM

V

t 0

r

d

I

/ I

DRM

RRM

R

th(j-c)

R

th(j-a)

PARAMETER

Gate Trigger Current

VD = 12 VDC, RL = 140W. Tj = 25 °C

CONDITIONS

MAX

Gate Trigger Voltage

Gate Non Trigger Voltage

Reverse Gate Voltage

Holding Current

Latching Current

Critical Rate of Voltage Rise

Critical Rate of Current Rise

On-state Voltage

Dynamic resistance MAX

Off-State Leakage Current

Thermal Resistance

VD = 12 VDC, RL = 140W, Tj = 25 °C

V

= V

D

= 125 °C

T

j

, RL = 3.3kW,

DRM

RGK = 220W

IRG = 10µA,

IT = 50 mA,

RGK = 1kW

Tj = 25 °C

IG = 1 mA, RGK = 1 kW

V

= 0.67 x V

D

T

= 125 °C

j

IG = 2 x I

GT

, RGK =1 kW,

DRM

£ 100 ns, f = 60 Hz,

tr

Tj = 125 °C

at IT = 1.6 Amp, tp = 380 µs, Tj = 25 °C

T

= 125 °CThreshold Voltage MAX

j

T

= 125 °C

j

VD = V

R

= V

, RGK = 1kW

DRM

,

RRM

T

= 125 °C

j

T

= 25 °CV

j

for AC 360° conduction angle

MAX

MIN

MAX 5

MAX

MIN

MIN A/µs

MAX

Junction-Amb for DC

Thermal Resistance

S = 1cm

2

Junction-Amb for DC

01

1

20

80

200

SENSITIVITY

03

02

20

200

0.8

0.1

8

6

20

75

50

1.95

0.95

600

100

80

150

04

15

50

15

18

0.5

5

80

Unit

µ AMIN

V

mA

V/µs

V

W

m

µ A

µ A1

ºC/W

°C/W

PART NUMBER INFORMATION

FS 01

FAGOR

SCR

CURRENT

01

B

00

A

BU

PACKAGING

FORMING

CASE

VOLTAGE

SENSITIVITY

Dec - 08

FS01...A

SENSITIVE GATE SCR

Fig. 1: Maximum average power dissipation versus average on-state current

P (W)

1

0.8

0.6

0.4

0.2

360°

a

0

0.60.40.2 0.8 1.0

Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration

[Zth(j-c) / Rth (j-c)]

1.0

0.5

0.2

0.1 1E-3

1E-2 1E-1 1E+0

tp (s)

Fig. 2: Average and D.C. on-state current versus case temperature

I

(A)

T(AV)

1

DC

0.8

0.6

a = 180 º

0.4

0.2

0

T lead (°C)

0 20 40 60 80 100 120 140

Fig. 4: Relative variation of gate trigger current, holding and latching current versus junction temperature

IGT, IH (Tj) / IGT, IH (Tj = 25 °C)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 20 60 80 1000 40 120 140

IH & I

I

GT

L

Tj (°C)

Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values).

IH [RGK] / IH[RGK = 1kW]

5

T

j

= 25 °C

4

3

2

1

RGK=(kW)

0

1E-2 1E-1 1E+0 1E-1

Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).

GK] / dV/dt [RGK = 220W]

dV/dt [R

10.00

1.00

0.10

RGK=(kW)

0.01

0.2

0 0.6 0.8 1.0 1.20.4 1.4 1.6 1.8 2.0

Tj = 125°C

VD = 0.67xV

DRM

Dec - 08

FS01...A

SENSITIVE GATE SCR

Fig. 7: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).

dV/dt [Cgk] / dV/dt [R

GK = 220W]

10

VD = 0.67 x V Tj = 125 ºC R

GK

= 220

DRM

W

8

6

4

2

0

246 8 10 12 14 16 18 20 22

Cgk(nF)

Fig. 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I

I

(A). I2t (A2s)

TSM

2

t.

100

Tj initial = 25 ºC

I

TSM

10

Fig. 8: Non repetitive surge peak on-state current versus number of cycles.

8

7

Tj initial = 25 ºC

6

5

4

3

2

1

Number of cycles

0

1 10 100

1,000

Fig. 10: On-state characteristics (maximum values)

ITM(A)

10

Tj initial

25 °C

Tj max

0.1

1

Tj max

1

I2 t

tp(ms)

1

10

0.1 0123

Vto = 0.95 V Rt = 0.600

4

W

VTM(V)

5

Dec - 08

FS01...A

SENSITIVE GATE SCR

PACKAGE MECHANICAL DATA

Marking: type number Weight: 0.2 g

PACKAGE MECHANICAL DATA

TO92

TO92 (FOR TAPE & REEL)

REF.

A B C D E F

G

H a b

REF.

A B C D E F

G

a b

DIMENSIONS

Milimeters

Min. Typ. Max.

0.90

4.40 4.60

2.34 2.54

1.07 1.27

4.40 4.60

12.70 14.10

3.40 3.60

1.30 1.50

0.38 0.44

0.33 0.41

Min. Typ. Max.

0.90 1.20

4.40 4.60

4.96 5.08

2.42 2.54

4.40 4.60

12.70 14.10

3.40 3.60

0.38 0.44

0.33 0.41

1.20

DIMENSIONS

Milimeters

1.50

4.80

2.74

1.47

4.80

15.50

3.86

1.70

0.51

1.50

4.80

5.20

2.66

4.80

15.50

3.86

0.51

Marking: type number Weight: 0.2 g

Dec - 08