Standalone Linear Li-Ion Battery Charger with
Thermal Regulation in SOT-23-5 and E-SOP-8
General Description
The EMC5754 is a complete linear charger for single cell
lithium-ion batteries. With small SOT-23-5 package and
few external components, EMC5754 is well suited for
portable applications. In addition, the EMC5754 is
specifically designed to work within USB power
specifications.
No external sense resistor and blocking diode are
required. Charging current can be programmed
externally with a single resistor. The built-in thermal
regulation facilitates charging with maximum power
without risk of overheating.
The EMC5754 always preconditions the battery with
1/10 of the programmed charge current at the
beginning of a charge cycle, until 40s after it verifies
that the battery can be fast-charged. The EMC5754
automatically terminates the charge cycle when the
charge current drops to 1/10th the pr ogrammed value
after the final float voltage is reached.
The EMC5754 consumes zero reverse current from the
battery at standby, shutdown and sleep modes. This
feature reduces the charge and discharge cycles on
the battery, further prolonging the battery life. The
EMC5754 can also be used as a LDO when battery is
removed. Other features include shutdown mode,
charge current monitor, under voltage lockout,
automatic recharge and status indicator.
Features
Programmable charge current up to 1A
No MOSFET, sense resistor or blocking diode
required
Complete linear charger both in SOT-23-5 and
E-SOP-8 for single cell Lithium-ion batteries
Typical zero reverse current from battery
Thermal regulation maximizes charge rate
without risk of overheating
Charges single cell Li-ion batteries directly from
USB port
Act as a LDO when battery is removed
Preset 4.2V/4.35V charge voltage with ±1%
accuracy
Automatic recharge
Charge status indicator
C/10 charge termination
45A shutdown supply current
2.9V trickle charge threshold
Soft-start limits inrush current
RoHS compliant and Pb-free
Applications
Wireless handsets
Hand-held instruments
Portable information appliances
Bluetooth application
Charging docks and cradles
Typical Application Diagram
580 mA Charger
LDO Mode
(Battery Removed)
Typical Performance Characteristics
Complete Charge Cycle (850mAh Battery)
(mA)
BAT
I
Time (1000s/DIV)
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 1/20
(V)
BAT
V
ESMT
EMC5754
Pin Configuration
SOT-23-5(Top View)
E-SOP-8(Top View)
Order information
EMC5754--XXVF05GRR
XX Charger Voltage
VF05 SOT-23-5 Package
GRR RoHS &Halogen free
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 2/20
ESMT
EMC5754
4.2V E-SOP-8 EMC5754-00SG08NRR
3K units
Tape & Reel
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 3/20
ESMT
EMC5754
Pin Functions
Name E-SOP-8 SOT-23-5
Function
NC 1,6,8
PROG 2
GND 3 2
VIN 4
BAT
5 3
NA Not connected.
Charge Current Program, Charge Current Monitor and Shutdown Pin. The charge
current is programmed by connecting a 1%resistor, R
in constant-current mode, this pin servos to 1V. In all modes, the voltage on this pin
can be used to measure the charge current using the following formula:
I
=(V
BAT
PROG/RPROG
The PROG pin can also be used to shut down the charger. Disconnecting the program
5
resistor from ground allows a 0.4A current to pull the PROG pin high. When it reaches
the 1.18V shutdown threshol d voltage, the charger enters shutdo wn mode. This pin is
also clamped to approximately 2.4V. Reconnecting R
charger to normal operation. Connecting the PROG pin to a voltage between 0.2 V
and 0.4V can force EMC5754 into LDO mode. The PROG pin must not be directlyshorted to ground at any condition.
Ground
Positive Input Supply Voltage. Provides power to the charger. VIN can range from
VBAT+0.5V to 5.5V and should be bypassed with at least a 1F capacitor. When VIN
4
drops to within 30mV above the BAT pin voltage, the EMC5754 enters shutdown
mode, dropping I
Charge Current Output and battery voltage feedback. This pin provides charge
current to the battery and regulates the final float voltage to 4.2V/4.35V. An internal
precision resistor divider from this pin sets the float voltage which is disconnected in
standby, shutdown and sleep modes.
to less than 1A.
BAT
)*960
, to ground. When c harging
PROG
to ground will return the
PROG
Open-Drain Charge Status Output. An internal N-channel MOSFET connects CHGB pin
to ground when the battery is charging. A fter the charge cycle is com pleted, the
CHGB
GND 9
7 1
internal N-channel MOSFET is replaced by a weak pull-down of approximately 24A,
indicating an “AC present” condition. When the EMC5754 detects an under voltage
lockout condition, CHGB is forced high impedance.
Thermal ground area.
NA
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 4/20
ESMT
EMC5754
Absolute Maximum Ratings (Notes 1, 2)
VIN, V
V
PROG
BAT
, V
-0.3V to 6.0V
CHGB
(Note 3) -0.3V to VIN +0.3V
BAT Short-Circuit Duration Continuous
BAT Pin Current 1A
PROG Pin Current 1mA
Storage Temperature Range -65°C to160°C
Note: Devices are ESD sensitive. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the device.
Junction Temperature (TJ) 150°C
Lead Temperature (10 sec.) 260°C
Thermal Resistance (
SOT-23-5 (Note 5)
E-SOP-8L 75°C/W
Operating Ratings
Temperature Range -40°C to 85°C
Supply Voltage VBAT+0.5V to 5.5V
)
JA
Electrical Characteristics
Unless otherwise specified, T
SymbolParameterConditions MinTypMaxUnits
VIN Input Voltage
ICC Input Supply Current
V
I
TRICKLE
V
V
V
V
V
Regulated Output (Float)
FLOAT
Voltage
I
BAT Pin Current
BAT
Trickle Charge Current V
Trickle Charge Threshold
TRICKLE
Voltage
Trickle Charge Hysteresis
TRHYS
Voltage
V
Under voltage Lockout
VUV
UVHYS
MSD
ASD
IN
Threshold
V
Under voltage Lockout
IN
Hysteresis
Manual Shutdown Threshold
Voltage
V
Lockout Threshold
IN-VBAT
Voltage
=25°C and VIN=5V.
A
V
BAT
V
BAT
Charge Mode, R
Standby Mode (Charge
Terminated)
Shutdown Mode (R
Connected, V
0°C ≦ TA ≦ 85°C (V
0°C ≦ T
R
PROG
Standby Mode, V
Shutdown Mode (R
Connected)
Sleep Mode, V
BAT<VTRICKLE
R
PROG
R
PROG
From VIN Low to High 2.45 3.0 3.75 V
180 mV
PROG Pin Rising 1.18 1.25 V
PROG Pin Falling 1.00 1.04 V
VIN from Low to High 80 140 mV
V
IN
=4.2V 4.25 5.5
=4.35V 4.4 5.5
=10K (Note 4) 150 260 330 A
PROG
V
50 106 150 A
Not
IN<VBAT
≦ 85°C (V
A
PROG
or VIN <VUV)
=4.2V) 4.158 4.2 4.242 V
FLOAT
=4.35V) 4.3065 4.35 4.3935 V
FLOAT
20 45 75 A
=2K, Current Mode 447 480 513 mA
=4.2V -1 0 1 A
BAT
Not
=10K, V
PROG
=0V -1 0 1 A
IN
, R
=2K 21 50 75 mA
PROG
Rising 2.8 2.9 3.0 V
BAT
-1 0 1 A
=10K 210 mV
from High to Low 5 30 mV
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 5/20
ESMT
EMC5754
C/10 Termination Current
I
TERM
Threshold
V
PROG Pin Voltage R
PROG
I
V
CHGB Pin Weak Pull-Down
CHGB
Current
CHGB Pin Output Low Voltage I
CHGB
R
=10K 0.1 mA/mA
PROG
=10K, Current Mode 0.93 1.0 1.07 V
PROG
=5V 24 A
V
CHGB
=5mA 0.23 0.6 V
CHGB
V
RECHRG
Recharge Battery Threshold
Voltage
Junction Temperature in
T
ILM
Constant Temperature Mode
V
FLOAT-VRECHRG
160 mV
120 oC
RON Power FET “ON” Resistance 550 m
TSS Soft-Start Time I
T
RECHARGE
T
I
Recharge Comparator Filter
Time
Termination Comparator Filter
TERM
Time
PROG Pin Pull-up Current 0.4 A
PROG
=0 to I
BAT
V
BAT
I
Falling Below I
BAT
=960V/R
BAT
100 s
PROG
High to Low 0.75 2.4 4.5 ms
/10 0.4 1.1 2.5 ms
CHG
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications are not
applicable when the device is operated outside of its rated operating conditions.
Note 2: All voltages are defined and measured with respect to the potential at the ground pin.
Note 3: Can not exceed 6.0V.
Note 4: Supply current includes PROG pin current (approximately 100A) but does not include any current delivered
to the battery through the BAT pin (approximately 96mA).
Note 5: 80
o
C/W to150oC/W, depending on PCB Layout.
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 6/20
ESMT
EMC5754
Functional Block Diagram
State Diagram
Elite Semiconductor Memory Technology Inc. Publication Date: Feb. 2014
Revision: 3.5 7/20
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