Ericsson PTF102027 Datasheet

PTF 102027
40 Watts, 925–960 MHz

GOLDMOS® Field Effect Transistor

Description

The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE
applications from 925 to 960 MHz. This device operates at 53%
efficiency with 15 dB of gain typical. Full gold metallization ensures
excellent device lifetime and reliability.

Typical Power Out put and Efficiency

vs. Input Pow er

70
60
50
40
30
20
10

Power Output (Watts)

0

0.0 0.5 1.0 1.5 2.0

Power Output

Input Power (Wa tts)

Efficiency

VDD = 26 V
I

f = 960 MHz

= 250 mA

DQ

70
60
50
40
30
20

Efficiency (%)

10
0

• Performance at 960 MHz, 26 Volts

- Output Power = 40 Watts

- Power Gain = 15.0 dB Typical

- Efficiency = 53% Typical

• Full Gold Metallization

• Excellent Thermal Stability

• 100% Lot Traceability

102027

1234560050

Package 20222

RF Specifications (100% Tested)

Characteristic Symbol Min Typ Max Units

Gain

(V

Power Output at 1 dB Compression

(V

Drain Efficiency

(V

Load Mismatch Tolerance

(V
—all phase angles at frequency of test)

All published data at T

= 26 V, P

DD

= 26 V, IDQ = 250 mA, f = 960 MHz) P-1dB 40 45 — Watts

DD

= 26 V, P

DD

= 26 V, P

DD

= 40 W, IDQ = 250 mA, f = 960 MHz) G

OUT

= 40 W, IDQ = 250 mA, f = 960 MHz) h 40 53 — %

OUT

= 40 W, IDQ = 250 mA, f = 960 MHz Y 10:1 — — —

OUT

= 25°C unless otherwise indicated.

CASE

pe

14.5 15 — dB

e

1

PTF 102027

e

Electrical Characteristics (100% Tested)

Characteristic Conditions Symbol Min Typ Max Units

Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA V

(BR)DSS

Drain-Source Leakage Current VDS = 26 V, VGS = 0 V I
Gate Threshold Voltage VDS = 10 V, ID = 100 mA V
Forward Transconductance VDS = 5 V, ID = 3 A g

DSS

GS(th)

fs

65 ——Volts
——1.0 mA

3.0 — 5.0 Volts
— 2.0 — Siemens

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation P

DSS

GS

J
D

Above 25°C derate by 0.714 W/°C
Storage Temperature Range T

Thermal Resistance (T

= 70°C) R

CASE

STG

qJC

65 Vdc
±20 Vdc
200 °C
125 Watts

–40 to +150 °C

1.4 °C/W

Typical Performance

Typical P

20

Outp ut P ower (W)

18

16

Gain

14

12

Gain (dB)

, Gain & Efficiency

OUT

vs. Frequency

VDD = 26 V
I

10

925 930 935 940 945 950 955 960

(at P-1dB)

Efficiency (%)

= 250 mA

DQ

Frequency (MHz)

70

60

50

40

30

20

Output Power & Efficiency

Broadband Test Fixture Performance

18

Gain

16
14
12
10

8

Gain (dB)

6
4
2

925 930 935 940 945 950 955 960

VDD = 26 V

= 250 mA

I

DQ

= 40 W

P

OUT

Frequency (MHz)

Efficiency

Return L oss (d B)

70
60
50
40

Efficiency (%)

30
20

-15

10
0

-30

Return Loss

-10

2