Ericsson PTF10195 Datasheet
PTF 10195
125 Watts, 869–894 MHz
GOLDMOS ® Field Effect Transistor
Description
The 10195 is an internally matched 125–watt GOLDMOS FET intended
for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device
operates at 53% efficiency with 13 dB of gain minimum. Full gold
metallization ensures excellent device lifetime and reliability.
Typical Power Out put and Efficiency
vs. Input Pow er
160
140
120
100
80
60
40
20
Power Output (Watts)
0
0123456
Power Output
Input Power (Wa tts)
Efficiency
VDD = 28 V
= 1.3 A
I
DQ
f = 894 MHz
64
56
48
40
32
24
16
Efficiency (%)
8
0
• INTERNALLY MATCHED
• Performance at 894 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 14 dB Typical
- Efficiency = 53% Typical
• Full Gold Metallization
• Excellent Thermal Stability
• 100% Lot Traceability
10195
12345600-A
Package 20248
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(V
Power Output at 1 dB Compression
(V
Drain Efficiency
(V
Load Mismatch Tolerance
(V
—all phase angles at frequency of test)
All published data at T
= 28 V, P
DD
= 28 V, IDQ = 1300 mA, f = 894 MHz) P-1dB 125 140 — Watts
DD
= 28 V , P
DD
= 28 V, P
DD
= 125 W, IDQ = 1300 mA, f = 894 MHz) G
OUT
= 125 W, IDQ = 1300 mA, f = 894 MHz) h 45 53 — %
OUT
= 125 W, IDQ = 1300 mA, f = 894 MHz Y 10:1 — — —
OUT
= 25°C unless otherwise indicated.
CASE
pe
13 14 — dB
e
1
PTF 10195
e
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Drain-Source Breakdown Voltage VGS = 0 V , ID = 25 mA V
(BR)DSS
Drain-Source Leakage Current VDS = 26 V , VGS = 0 V I
Gate Threshold Voltage VDS = 10 V, ID = 100 mA V
Forward Transconductance VDS = 10 V, ID = 3 A g
DSS
GS(th)
fs
65 ——Volts
——1.0 mA
3.0 — 5.0 Volts
— 3.0 — Siemens
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
Gate-Source Voltage V
Operating Junction Temperature T
Total Device Dissipation P
DSS
GS
J
D
Above 25°C derate by 1.52 W/°C
Storage Temperature Range T
Thermal Resistance (T
Typical Performance
Test Circuit
= 70°C) R
CASE
STG
qJC
65 Vdc
±20 Vdc
200 °C
266 Watts
–40 to +150 °C
.66 °C/W
Typical P
20
18
, Gain & Efficiency
OUT
vs. Frequency
Outp ut P ower (W)
VDD = 28 V
16
Gain (dB)
Gain
14
12
10
869 874 879 884 889 894
I
DQ
= 1.3 A
Efficiency (%)
Frequency (MHz)
(at P-1dB)
200
160
120
80
40
0
Efficiency
Output Power &
Broadband Test Fixture Performance
20
18
16
14
Gain
12
10
Gain (dB)
8
6
4
2
869 874 879 884 889 894
VDD = 28 V
= 1.3 A
I
DQ
= 125 W
P
OUT
Frequency (MHz)
Efficiency
Return L oss (d B)
65
55
45
35
25
Efficiency (%)Return Loss
15
0
5
-10
-5
-20
-15
-30
-25
2
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